TAKAHASHI Tsuyoshi | Fujitsu Laboratories Ltd.
スポンサーリンク
概要
関連著者
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TAKAHASHI Tsuyoshi
Fujitsu Laboratories Ltd.
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HARA Naoki
Fujitsu Laboratories Ltd.
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Nakasha Yasuhiro
Fujitsu Limited
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Suzuki Toshihide
Fujitsu Limited, Atsugi, Kanagawa 243-0197, Japan
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OKAMOTO Naoya
Fujitsu Laboratories Ltd.
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Sato Masaru
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
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YOKOYAMA Naoki
Fujitsu Laboratories Ltd.
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FUJII Toshio
Fujitsu Laboratories Ltd.
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Yokoyama Naoki
Department of Pediatrics, Kobe University Graduate School of Medicine
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サンドゥー アダルシュ
東工大
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Sandhu A
Fujitsu Laboratories Ltd.
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Sandhu Adarsh
Fujitsu Laboratories Limited
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ANDO Hideyasu
Fujitsu Laboratories Ltd.
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MAKIYAMA Kozo
Fujitsu Laboratories Ltd.
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Fujii Toshio
Fujitsu Laboratories Lid.
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Takahashi Teruo
Department Of Organic And Polymeric Materials Tokyo Institute Of Technology
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Takahashi Tetsuo
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
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Taguchi Tomohiro
Department Of Organic Materials Tokyo Institute Of Technology
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Ando H
Toshiba Corp. Kawasaki Jpn
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Takahashi T
Japan Advanced Institute Of Science And Technology
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Yokoyama N
Fujitsu Laboratories Ltd.
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Takahashi Tsuyoshi
Fujitsu Limited
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Suzuki T
Research Center Sony Corporation
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TANAKA Hitoshi
Fujitsu Laboratories Ltd.
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TAKIKAWA Masahiko
Fujitsu Laboratories Ltd.
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Fujii Toshio
Fujitsu Laboratories Limited
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SATO Masaru
Fujitsu Ltd.
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HIROSE Tatsuya
Fujitsu Ltd.
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Suzuki Tetsutaro
Departments Of Surgery Kitasato University School Of Medicine
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Fujii T
Central Research Institute Of Electric Power Industry
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Sawada K
Fujitsu Laboratories Ltd.
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Okamoto N
Fujitsu Lab. Ltd. Atsugi Jpn
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Makiyama K
Fujitsu Limited
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Suzuki Toshihide
Fujitsu Ltd.
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Nakasha Yasuhiro
Fujitsu Ltd.
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Suzuki T
Departments Of Surgery Kitasato University School Of Medicine
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OHKI Toshihiro
FUJITSU LABORATORIES LTD.
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SAWADA Ken
Fujitsu Laboratories Ltd.
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Hirose Tatsuya
Compound Semiconductor Devices Lab Fujitsu Laboratories Ltd.
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Nakasha Y
Fujitsu Ltd.
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Suzuki Toshihide
Compound Semiconductor Devices Lab Fujitsu Laboratories Ltd.
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Hirose T
Fujitsu Ltd.
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Suzuki Takeshi
Laboratory Of Microbial Biochemistry Institute For Chemical Research Kyoto University
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Kawano Yoichi
Fujitsu Limited, Atsugi, Kanagawa 243-0197, Japan
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Shiba Shoichi
Fujitsu Ltd., Atsugi, Kanagawa 243-0197, Japan
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Matsumura Hiroshi
Fujitsu Ltd., Atsugi, Kanagawa 243-0197, Japan
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Nakasha Yasuhiro
Fujitsu Ltd., Atsugi, Kanagawa 243-0197, Japan
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Sato M
Tokyo Inst. Technol. Tokyo
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YAMAGUCHI Yasuhiro
Fujitsu Laboratories Ltd.
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YAMAURA Shinji
Fujitsu Laboratories Ltd.
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ISHIKAWA Hideaki
Fujitsu Laboratories Ltd.
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Ishikawa T
Fujitsu Laboratories Ltd.
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Takahashi Toshiaki
Department Of Environment And Mutation Research Institute For Radiation Biology And Medicine Hiroshi
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MASUDA Satoshi
Fujitsu Laboratories Ltd.
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Kawano Yoichi
Fujitsu Ltd.
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KANO Hideki
Fujitsu Laboratories Ltd.
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TAKIGAWA Masahiko
Fujitsu Laboratories Ltd.
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ARAI Tomoyuki
Fujitsu Laboratories Ltd.
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Takahashi T
Second Department Of Internal Medicine Hiroshima University School Of Medicine
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Yokoyama Naoki
Institute For Nano Quantum Information Electronics The University Of Tokyo
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Yamaguchi Yasuhiro
Fujitsu Laboratories Lid.
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Takahashi T
Department Of Pediatrics Akita University Graduate School Of Medicine
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Takahashi Tsutomu
Department Of Energy Sciences The Graduate School At Nagatsuta Tokyo Institute Of Technology
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Takahashi Tsuyoshi
Fujitsu Limited, Atsugi, Kanagawa 243-0197, Japan
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Takahashi Tsuyoshi
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Makiyama Kozo
Fujitsu Limited, Atsugi, Kanagawa 243-0197, Japan
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Ohki Toshihiro
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
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Takikawa Masahiko
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Okamoto Naoya
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Tanaka Hitoshi
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Takahashi Tsuyoshi
Fujitsu Ltd., Atsugi, Kanagawa 243-0197, Japan
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Hara Naoki
Fujitsu Limited, Atsugi, Kanagawa 243-0197, Japan
著作論文
- High Current Gain AlGaAs/GaAs Heterojunction Bipolar Transistors with Carbon-Doped Base Grown by Gas Source Molecular Beam Epitaxy Using Trimethylamine Alane as the Aluminum Source
- Carbon-Doped-Base AlGaAs/GaAs HBTs Grown by Gas-Source Molecular Beam Epitaxy Using Only Gaseous Sources
- Gas Source MBE Growth of GaAs/AlGaAs Heterojunction Bipolar Transistor with a Carbon Doped Base Using Only Gaseous Sources
- Near-Ohmic Contact of n-GaAs with GaS/GaAs Quasi-Metal-Insulator-Semiconductor Structure
- A 7.6-ps Pulse Generator Using 0.13-μm InP-based HEMTs for Ultra Wide-Band Impulse Radio Systems
- Over 40-Gbit/s InP HEMT ICs for Optical Communication Systems(Heterostructure Microelectronics with TWHM2003)
- Elmination of Kink Phenomena in InP-Based HEMTs by Forming Direct Ohmic Contacts in the Channel
- An 85 GHz Distributed Amplifier with 15.5 dBm Output Saturated Power Using 0.1 μm InP-based High Electron Mobility Transistors
- Near-Ohmic Contact of n-GaAs with GaS/GaAs Quasi-Metal-Insulator-Semiconductor Structure
- 93--133 GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology
- 93-133GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology (Special Issue : Solid State Devices and Materials)