TAKAHASHI Tsuyoshi | Fujitsu Laboratories Ltd.
スポンサーリンク
概要
関連著者
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TAKAHASHI Tsuyoshi
Fujitsu Laboratories Ltd.
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HARA Naoki
Fujitsu Laboratories Ltd.
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Nakasha Yasuhiro
Fujitsu Limited
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Suzuki Toshihide
Fujitsu Limited, Atsugi, Kanagawa 243-0197, Japan
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OKAMOTO Naoya
Fujitsu Laboratories Ltd.
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Sato Masaru
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
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YOKOYAMA Naoki
Fujitsu Laboratories Ltd.
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FUJII Toshio
Fujitsu Laboratories Ltd.
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Yokoyama Naoki
Department of Pediatrics, Kobe University Graduate School of Medicine
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サンドゥー アダルシュ
東工大
著作論文
- High Current Gain AlGaAs/GaAs Heterojunction Bipolar Transistors with Carbon-Doped Base Grown by Gas Source Molecular Beam Epitaxy Using Trimethylamine Alane as the Aluminum Source
- Carbon-Doped-Base AlGaAs/GaAs HBTs Grown by Gas-Source Molecular Beam Epitaxy Using Only Gaseous Sources
- Gas Source MBE Growth of GaAs/AlGaAs Heterojunction Bipolar Transistor with a Carbon Doped Base Using Only Gaseous Sources
- Near-Ohmic Contact of n-GaAs with GaS/GaAs Quasi-Metal-Insulator-Semiconductor Structure
- A 7.6-ps Pulse Generator Using 0.13-μm InP-based HEMTs for Ultra Wide-Band Impulse Radio Systems
- Over 40-Gbit/s InP HEMT ICs for Optical Communication Systems(Heterostructure Microelectronics with TWHM2003)
- Elmination of Kink Phenomena in InP-Based HEMTs by Forming Direct Ohmic Contacts in the Channel
- An 85 GHz Distributed Amplifier with 15.5 dBm Output Saturated Power Using 0.1 μm InP-based High Electron Mobility Transistors
- Near-Ohmic Contact of n-GaAs with GaS/GaAs Quasi-Metal-Insulator-Semiconductor Structure
- 93--133 GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology