TANAKA Hitoshi | Fujitsu Laboratories Ltd.
スポンサーリンク
概要
関連著者
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TANAKA Hitoshi
Fujitsu Laboratories Ltd.
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TAKIKAWA Masahiko
Fujitsu Laboratories Ltd.
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KOMENO Junji
Fujitsu Laboratories Ltd.
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NAKANISHI Toshiro
FUJITSU LABORATOIRES Ltd.
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Komeno J
Fujitsu Laboratories Ltd.
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Ohori Tatsuya
Fujitsu Laboratories Ltd.
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OKAMOTO Naoya
Fujitsu Laboratories Ltd.
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KASAI Kazumi
Fujitsu Laboratories Ltd.
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KIKKAWA Toshihide
Fujitsu Laboratories Ltd.
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HARA Naoki
Fujitsu Laboratories Ltd.
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Kasai K
Fujitsu Laboratories Ltd.
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Takikawa M
Fujitsu Laboratories Ltd.
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Itoh Hisayoshi
Institute Of Materials Science University Of Tsukuba
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Suzuki M
Shizuoka Univ. Hamamatsu
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Itoh H
Semiconductor Academic Research Center
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TASHIRO Hiroko
Fujitsu Laboratories Ltd.
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Itoh Hitoshi
Semiconductor Academic Research Center
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ITOH Hiromi
Fujitsu Laboratories Ltd.
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SATO Akira
Fujitsu Laboratories Ltd.
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Yamaguchi Masaomi
Fujitsu Lab. Ltd. Kanagawa Jpn
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Tanaka H
Hitachi Ltd. Kokubunji‐shi Jpn
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TAKAHASHI Tsuyoshi
Fujitsu Laboratories Ltd.
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SUZUKI Masahisa
Fujitsu Ltd.
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MITANI Eizou
Fujitsu Laboratories Ltd.
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WAKAI Hironori
FUJITSU LABORATOIRES Ltd.
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SUGIZAKI Taro
FUJITSU LABORATOIRES Ltd.
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KUMISE Takaaki
FUJITSU LABORATOIRES Ltd.
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KOBAYASHI Masahiro
FUJITSU LABORATOIRES Ltd.
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AOKI Masaki
FUJITSU LABORATORIES LTD.
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Taga Hidenori
Kddi R&d Laboratories Inc.
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Tashiro Hiroko
Fujitsu Limited Fujitsu Laboratories Ltd.
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JOSHIN Kazukiyo
Fujitsu Laboratories Ltd.
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Joshin K
Fujitsu Ltd.
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Nakasha Yasuhiro
Fujitsu Ltd.
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WATANABE Yuu
Fujitsu Laboratories Ltd.
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Watanabe Y
National Institute Of Advanced Research Association
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TSUNODA Kouji
Fujitsu Limited, Fujitsu Laboratories Ltd.
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Nakasha Y
Fujitsu Ltd.
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Watanabe Yoshinori
National Institute Of Advanced Industrial Science And Technology (aist)
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Nakasha Yasuhiro
Fujitsu Limited
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TSUNODA Kouji
Fujitsu Labs. Ltd.
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YAMAGUCHI Masaomi
Fujitsu Limited
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SUGIYAMA Yoshihiro
Fujitsu Limited
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Harada N
Department Of Electrical Engineering (nagaoka University Of Technology)
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Wada J
Fujitsu Laboratories Ltd.
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Eshita T
Fujitsu Lab. Ltd. Kanagawa Jpn
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TOMESAKAI Nobuaki
Fujitsu Ltd.
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SUZUKl Masahisa
Fujitsu Laboratories Ltd.
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MAKIYAMA Kozo
Fujitsu Laboratories Ltd.
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OKABE Tadao
Fujitsu Laboratories Ltd.
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MITANI Eizo
FUJITSU LABORATORIES LIMITED
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HIKOSAKA Kohki
Fujitsu Laboratories Ltd.
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Harada Nobuhiro
Department Of Electrical Engineering (nagaoka University Of Technology)
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Suzuki Mariko
Advanced Semiconductor Devices Research Laboratories R&d Center Toshiba Corporation
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TAKECHI Masaru
FUJITSU LABORATORIES LIMITED
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MIYAGAKI Shinji
Fujitsu Laboratories Ltd.
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HARADA Naoki
Fujitsu Laboratories Ltd.
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ESHITA Takashi
Fujitsu Laboratories Ltd.
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Aoki Masaki
Embedded Memories Development Department Fujitsu Laboratories Ltd.
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Suzuki M
Department Of Electronics Graduate School Of Engineering Tohoku University
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WADA Jun
Fujitsu Laboratories Ltd.
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MATSUKURA Yusuke
Fujitsu Laboratories Ltd.
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OGIHARA Toshihiro
Fujitsu Quantum Devices Ltd.
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FURUKAWA Yukihiko
Fujitsu Quantum Devices Ltd.
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Tsunoda Kouji
Fujitsu Limited Fujitsu Laboratories Ltd.
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Kinoshita Kentaro
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Tamura Tetsuro
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Tsunoda Kouji
Fujitsu Labs. Ltd.:fujitsu Ltd.
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Nakanishi Toshiro
Fujitsu Labs. Ltd.:fujitsu Ltd.
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Sugiyama Yoshihiro
Fujitsu Laboratories Ltd.
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Kobayashi Kazuo
Fujitsu Laboratories Ltd.
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Sato Akira
Fujitsu Labs. Ltd.:fujitsu Ltd.
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KINOSHITA Kentaro
Fujitsu Laboratories Ltd.
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Sato Yoshihiro
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Takahashi Tsuyoshi
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Takikawa Masahiko
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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HARADA Naoki
Fujitsu Laboratories Limited
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Tsunoda Kouji
Fujitsu Limited, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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TAMURA Tetsuro
Fujitsu Laboratories Ltd.
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Okamoto Naoya
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Wakai Hironori
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Tanaka Hitoshi
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Sato Akira
Fujitsu Limited, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Yagaki Shinya
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
著作論文
- AlGaAs/GaAs and AlGaAs/InGaAs/GaAs High Electron Mobility Transistors Grown by Metalorganic Vapor Phase Epitaxy Using Tertiarybutylarsine
- Large-Area MOVPE Growth of AlGaAs/GaAs Heterostructures for HEMT LSIs
- MOVPE Growth of AlGaAs /GaAs Heterostructures for HEMT LSI
- Ultra High Density HfO2-Nanodot Memory for Flash Memory Scaling
- Near-Ohmic Contact of n-GaAs with GaS/GaAs Quasi-Metal-Insulator-Semiconductor Structure
- Multi-Wafer Growth of HEMT LSI Quality AlGaAs/GaAs Heterostructures by MOCVD
- Realization of Highly Resistive GaAs/Si Interface and Improvement of RF Performance for High Electron-Mobility Transistors Grown on Si Substrates
- InGaP-Channel Field Effect Transistors with High Breakdown Voltage (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- InGaP Channel FET with High Breakdown Voltage
- Donor Neurtalization by Fluorine Containing Plasmas in Si-Doped n-Type GaAs Crystals
- Device Design of Direct Tunneling Memory (DTM) Using Technology Computer Aided Design (TCAD) for Low-Power RAM Applications
- Improvement in Retention/Program Time Ratio of Direct Tunneling Memory (DTM) for Low Power SoC Applications(Memory, Low-Power LSI and Low-Power IP)
- GaAs Surface Passivation with GaS Thin Film Grown by Molecular Beam Epitaxy
- Band Alignment of Molecular-Beam-Apiary-Grown GaS/GaAs Structure Using a Single [(t-Bu)GaS]_4 Precursor : Semiconductors
- Lowering the Switching Current of Resistance Random Access Memory Using a Hetero Junction Structure Consisting of Transition Metal Oxides
- MOVPE Growth of Selectively Doped AlGaAs/GaAs Heterostructures with Tertiarybutylarsine
- Device Design of Direct Tunneling Memory (DTM) Using Technology Computer Aided Design (TCAD) for Low-Power RAM Applications
- Near-Ohmic Contact of n-GaAs with GaS/GaAs Quasi-Metal-Insulator-Semiconductor Structure
- Ultrahigh-Density HfO2 Nanodots for Flash Memory Scaling
- A Novel Magnetic Tunneling Junction Shaped Cell with Large Write Operation Margin for High-Density Magnetoresistive Random Access Memory