Kasai K | Fujitsu Laboratories Ltd.
スポンサーリンク
概要
関連著者
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KASAI Kazumi
Fujitsu Laboratories Ltd.
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KOMENO Junji
Fujitsu Laboratories Ltd.
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Kasai K
Fujitsu Laboratories Ltd.
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Komeno J
Fujitsu Laboratories Ltd.
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Ohori Tatsuya
Fujitsu Laboratories Ltd.
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TANAKA Hitoshi
Fujitsu Laboratories Ltd.
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Itoh Hisayoshi
Institute Of Materials Science University Of Tsukuba
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Suzuki M
Shizuoka Univ. Hamamatsu
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Itoh H
Semiconductor Academic Research Center
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Itoh Hitoshi
Semiconductor Academic Research Center
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SUZUKI Masahisa
Fujitsu Ltd.
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ITOH Hiromi
Fujitsu Laboratories Ltd.
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SUEHIRO Haruyoshi
Fujitsu Laboratories Ltd.
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TOMESAKAI Nobuaki
Fujitsu Ltd.
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TAKIKAWA Masahiko
Fujitsu Laboratories Ltd.
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Hoshino M
Fujitsu Laboratories Ltd.
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HOSHINO Masataka
Fujitsu Laboratories Ltd.
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Hoshino Masataka
Fujitsu Laboratories Lid.
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Takikawa M
Fujitsu Laboratories Ltd.
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KIKKAWA Toshihide
Fujitsu Laboratories Ltd.
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MITANI Eizou
Fujitsu Laboratories Ltd.
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MAKIYAMA Kozo
Fujitsu Laboratories Ltd.
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OKABE Tadao
Fujitsu Laboratories Ltd.
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MITANI Eizo
FUJITSU LABORATORIES LIMITED
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Suzuki Mariko
Advanced Semiconductor Devices Research Laboratories R&d Center Toshiba Corporation
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TAKECHI Masaru
FUJITSU LABORATORIES LIMITED
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Suzuki M
Department Of Electronics Graduate School Of Engineering Tohoku University
著作論文
- Warp Reduction of High-Electron-Mobility-Transistor on Si Wafer by In-Doped Selectively Doped Heterostructure and Strained-Layer Superlattice Buffer Layer
- Metalorganic Vapor Phase Epitaxial Growth for High Electron Mobility Transistor LSIs
- Large-Area MOVPE Growth of AlGaAs/GaAs Heterostructures for HEMT LSIs
- MOVPE Growth of AlGaAs /GaAs Heterostructures for HEMT LSI
- Multi-Wafer Growth of HEMT LSI Quality AlGaAs/GaAs Heterostructures by MOCVD
- Chemical-Mechanical Polishing of Metalorganic Chemical-Vapor-Deposited Gold for LSI Interconnection
- Surface Morphology and Line Fill Properties of Gold Grown by Organometallic Chemical Vapor Deposition
- MOVPE Growth of Selectively Doped AlGaAs/GaAs Heterostructures with Tertiarybutylarsine