KIKKAWA Toshihide | Fujitsu Laboratories Ltd.
スポンサーリンク
概要
関連著者
-
KIKKAWA Toshihide
Fujitsu Laboratories Ltd.
-
TANAKA Hitoshi
Fujitsu Laboratories Ltd.
-
JOSHIN Kazukiyo
Fujitsu Laboratories Ltd.
-
Tanaka H
Hitachi Ltd. Kokubunji‐shi Jpn
-
KOMENO Junji
Fujitsu Laboratories Ltd.
-
TAKIKAWA Masahiko
Fujitsu Laboratories Ltd.
-
HARA Naoki
Fujitsu Laboratories Ltd.
-
Komeno J
Fujitsu Laboratories Ltd.
-
Taga Hidenori
Kddi R&d Laboratories Inc.
-
Joshin K
Fujitsu Ltd.
-
Nakasha Yasuhiro
Fujitsu Ltd.
-
WATANABE Yuu
Fujitsu Laboratories Ltd.
-
Watanabe Y
National Institute Of Advanced Research Association
-
Nakasha Y
Fujitsu Ltd.
-
Takikawa M
Fujitsu Laboratories Ltd.
-
Watanabe Yoshinori
National Institute Of Advanced Industrial Science And Technology (aist)
-
Nakasha Yasuhiro
Fujitsu Limited
-
Ohori Tatsuya
Fujitsu Laboratories Ltd.
-
Suzuki M
Shizuoka Univ. Hamamatsu
-
OKAMOTO Naoya
Fujitsu Laboratories Ltd.
-
KASAI Kazumi
Fujitsu Laboratories Ltd.
-
MITANI Eizou
Fujitsu Laboratories Ltd.
-
SUZUKl Masahisa
Fujitsu Laboratories Ltd.
-
Suzuki Mariko
Advanced Semiconductor Devices Research Laboratories R&d Center Toshiba Corporation
-
WATANABE Keiji
Fujitsu Laboratories Ltd.
-
Kasai K
Fujitsu Laboratories Ltd.
-
Imanishi Kenji
Fujitsu Laboratories Ltd.
-
Suzuki M
Department Of Electronics Graduate School Of Engineering Tohoku University
-
OHKI Toshihiro
FUJITSU LABORATORIES LTD.
-
NAKAMURA Norikazu
Fujitsu Laboratories Ltd
-
Ohki Toshihiro
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
-
Imanishi Kenji
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
-
Nakamura Norikazu
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
-
Ishiguro Tetsuro
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
-
Yamada Atsushi
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
-
Kotani Junji
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
-
Okamoto Naoya
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
-
Ozaki Shiro
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
-
Kanamura Masahito
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
-
Kikkawa Toshihide
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
著作論文
- AlGaAs/GaAs and AlGaAs/InGaAs/GaAs High Electron Mobility Transistors Grown by Metalorganic Vapor Phase Epitaxy Using Tertiarybutylarsine
- InGaP-Channel Field Effect Transistors with High Breakdown Voltage (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- InGaP Channel FET with High Breakdown Voltage
- Highly-Reliable GaN HEMT Transmitter Amplifier with Output Power of Over 200W for Wireless Base Station
- MOVPE Growth of Selectively Doped AlGaAs/GaAs Heterostructures with Tertiarybutylarsine
- Highly Reliable 250 W GaN High Electron Mobility Transistor Power Amplifier
- New Model of Fe Diffusion in Highly Resistive Fe-Doped Buffer Layer for GaN High-Electron-Mobility Transistor
- Effect of Atomic-Layer-Deposition Method on Threshold Voltage Shift in AlGaN/GaN Metal--Insulator--Semiconductor High Electron Mobility Transistors