Highly Reliable 250 W GaN High Electron Mobility Transistor Power Amplifier

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概要

• 論文の詳細を見る

• A state-of-the-art highly reliable 250 W AlGaN/GaN high electron mobility transistor (HEMT) push-pull transmitter amplifier operated at a drain bias voltage of 50 V is described. The amplifier, combined with a digital predistortion (DPD) system, also achieved an adjacent channel leakage power ratio (ACLR) of less than $-50$ dBc for 4-carrier wideband code division multiple access (W-CDMA) signals with a drain supply voltage of 50 V. I also demonstrate its stable operation under RF stress testing for 1000 h at a drain bias voltage of 60 V. Stable gate-leakage current for high-temperature operation was verified. Device fabrications on 4 inch sapphire and 3 inch semi-insulating (S.I.) SiC substrates were also addressed. These performances clarify that an AlGaN/GaN HEMTs amplifier is suitable for 3G W-CDMA systems.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-07-15

著者

• KIKKAWA Toshihide

  Fujitsu Laboratories Ltd.

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