Effect of Atomic-Layer-Deposition Method on Threshold Voltage Shift in AlGaN/GaN Metal--Insulator--Semiconductor High Electron Mobility Transistors
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概要
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We have investigated the mechanism for threshold voltage (V_{\text{th}}) shift of AlGaN/GaN metal--insulator--semiconductor high electron mobility transistors (MIS-HEMTs) for power applications. In this study, atomic layer deposited (ALD)-Al<inf>2</inf>O<inf>3</inf>was used in AlGaN/GaN MIS-HEMTs as gate insulator films, and we focused on plasma-induced damages at the GaN/Al<inf>2</inf>O<inf>3</inf>interface, when O<inf>2</inf>plasma was used as the oxidant source for the ALD method. We clarified that the deep trap sites which were located around 2.58--3.26 eV from the conduction band edge were generated in the oxidized-GaN layer at the GaN/Al<inf>2</inf>O<inf>3</inf>interface due to plasma-induced damages, and this caused the V_{\text{th}} shift when using O<inf>2</inf>plasma. Therefore, we controlled the initial oxidant source, and demonstrated the reductions in the V_{\text{th}} shift and the gate leakage current by applying hybrid--Al<inf>2</inf>O<inf>3</inf>structure (lower H<inf>2</inf>O vapor--Al<inf>2</inf>O<inf>3</inf>/upper O<inf>2</inf>plasma--Al<inf>2</inf>O<inf>3</inf>) for AlGaN/GaN MIS-HEMTs.
- The Japan Society of Applied Physicsの論文
- 2013-11-25
著者
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OKAMOTO Naoya
Fujitsu Laboratories Ltd.
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KIKKAWA Toshihide
Fujitsu Laboratories Ltd.
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OHKI Toshihiro
FUJITSU LABORATORIES LTD.
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Ohki Toshihiro
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
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Okamoto Naoya
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
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Ozaki Shiro
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
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Kanamura Masahito
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
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Kikkawa Toshihide
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
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