Gas Source Molecular Beam Epitaxy Growth of High Quality AlGaAs Using Trimethylamine Alane as the Aluminum Source

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1991-12-30

著者

• FUJII Toshio

  Fujitsu Laboratories Ltd.

• サンドゥー アダルシュ

  東工大

• Sandhu A

  Fujitsu Laboratories Ltd.

• Sandhu Adarsh

  Fujitsu Laboratories Limited

• ANDO Hideyasu

  Fujitsu Laboratories Ltd.

• OKAMOTO Naoya

  Fujitsu Laboratories Ltd.

• Fujii Toshio

  Fujitsu Laboratories Lid.

• Fujii Toshio

  Fujitsu Laboratories Limited

• Fujii T

  Central Research Institute Of Electric Power Industry

• Ando H

  Toshiba Corp. Kawasaki Jpn

• Okamoto N

  Fujitsu Lab. Ltd. Atsugi Jpn

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