High Current Gain AlGaAs/GaAs Heterojunction Bipolar Transistors with Carbon-Doped Base Grown by Gas Source Molecular Beam Epitaxy Using Trimethylamine Alane as the Aluminum Source
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-03-01
著者
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YOKOYAMA Naoki
Fujitsu Laboratories Ltd.
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FUJII Toshio
Fujitsu Laboratories Ltd.
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Yokoyama Naoki
Department of Pediatrics, Kobe University Graduate School of Medicine
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サンドゥー アダルシュ
東工大
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Sandhu A
Fujitsu Laboratories Ltd.
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Sandhu Adarsh
Fujitsu Laboratories Limited
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YAMAURA Shinji
Fujitsu Laboratories Ltd.
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ANDO Hideyasu
Fujitsu Laboratories Ltd.
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OKAMOTO Naoya
Fujitsu Laboratories Ltd.
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TAKAHASHI Tsuyoshi
Fujitsu Laboratories Ltd.
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Fujii Toshio
Fujitsu Laboratories Lid.
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Fujii Toshio
Fujitsu Laboratories Limited
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Takahashi Teruo
Department Of Organic And Polymeric Materials Tokyo Institute Of Technology
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Takahashi Tetsuo
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
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Taguchi Tomohiro
Department Of Organic Materials Tokyo Institute Of Technology
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Takahashi Toshiaki
Department Of Environment And Mutation Research Institute For Radiation Biology And Medicine Hiroshi
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Fujii T
Central Research Institute Of Electric Power Industry
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Ando H
Toshiba Corp. Kawasaki Jpn
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Okamoto N
Fujitsu Lab. Ltd. Atsugi Jpn
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Takahashi T
Japan Advanced Institute Of Science And Technology
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Yokoyama N
Fujitsu Laboratories Ltd.
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Takahashi T
Second Department Of Internal Medicine Hiroshima University School Of Medicine
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Yokoyama Naoki
Institute For Nano Quantum Information Electronics The University Of Tokyo
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Takahashi T
Department Of Pediatrics Akita University Graduate School Of Medicine
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Takahashi Tsutomu
Department Of Energy Sciences The Graduate School At Nagatsuta Tokyo Institute Of Technology
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