Improved Emitter-Base Junction with In_2O_3 in Dielectric-Base Transistor
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-12-15
著者
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Yabe Aya
Department Of Molecular Biology Institute Of Gerontology Nippon Medical School
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Tamura H
R&d Center Kasado Administrative Division Power & Industrial Systems Hitachi Ltd.
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Yokoyama Naoki
Department of Pediatrics, Kobe University Graduate School of Medicine
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Yoshida Akira
First Department Of Internal Medicine University Of Fukui
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Fujimaki N
National Inst. Of Information And Communications Technol. Kobe Jpn
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Hato Tsunehiro
Superconductivity Research Laboratory Istec
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Hato Tsunehiro
Department Of Electronics Faculty Of Engineering Nagoya University
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Yokoyama N
Fujitsu Laboratories Ltd.
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HATO Tsunehiro
Deposit Process Development Div., Fujitsu Limited
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TAKAUCHI Hideki
Deposit Process Development Div., Fujitsu Limited
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YOSHIDA Akira
Deposit Process Development Div., Fujitsu Limited
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TAMURA Hirotaka
Deposit Process Development Div., Fujitsu Limited
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FUJIMAKI Norio
Deposit Process Development Div., Fujitsu Limited
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OSHIMA Yoshifumi
Department of Materials Science and Engineering, Interdisciplinary Graduate School of Science and En
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YOKOYAMA Naoki
Deposit Process Development Div., Fujitsu Limited
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Tamura Hitoshi
Mechanical Engineering Research Laboratory Hitachi Ltd.
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Oshima Yoshifumi
Department Of Materials Science And Engineering Interdisciplinary Graduate School Of Science And Eng
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Tamura Hideki
Faculty Of Eng. Yamagata Univ.
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Yokoyama Naoki
Institute For Nano Quantum Information Electronics The University Of Tokyo
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