Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1984-05-20

著者

• YOKOYAMA Naoki

  Fujitsu Laboratories Ltd.

• OHSHIMA Toshio

  Fujitsu Laboratories Ltd.

• IMAMURA Kenichi

  Fujitsu Laboratories Ltd.

• MUTO Shunichi

  Fujitsu Laboratories Ltd.

• Imamura K

  Fujitsu Lab. Ltd. Kanagawa Jpn

• OHSHIMA Takeshi

  Japan Atomic Energy Research Institute

• HIYAMIZU Satoshi

  Graduate School of Engineering Science, Osaka University

• Hiyamizu Satoshi

  Fujitsu Limited

• Nishi Hidetoshi

  Fujitsu Limited

• KONDO Kazuhiro

  Fujitsu Limited

• Komeya Katutoshi

  Graduate School Of Environment And Information Science Yokohama National University

• Hiyamizu Satoshi

  Fujitsu Laboratories Limited

• Muto S

  Kek Ibaraki

• Yokoyama Naoki

  Department of Pediatrics, Kobe University Graduate School of Medicine

• Kondo Kazuhiro

  Fujitsu Laboratories Ltd.

• Kondo K

  Fujitsu Laboratories Ltd.

• Imamura Kimitake

  Faculty Of Engineering Yokohama National University

• Ohshima T

  Oki Electric Ind. Co. Ltd. Tokyo Jpn

• Nishi H

  Fujitsu Limited

• Nishi Hidetoshi

  Fujitsu Laboratories Limited

関連論文

• First Demonstration of Electrically Driven 1.55μm Single-Photon Generator
• Single-photon generator for telecom applications
• Development of Electrically Driven Single-Photon Emitter at Optical Fiber Bands
• Single-Photon Generation in the 1.55-μm Optical-Fiber Band from an InAs/InP Quantum Dot
• Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-μm Optical-Fiber Band
• Phonon Assisted Tunneling and P/V-Ratio in a Magnetic Confined Quasi 0D InGaAs/InAlAs Resonant Tunneling Diode
• Size, density, and shape of InAs quantum dots in closely stacked multilayers grown by the Stranski-Krastanow mode
• Lattice Deformation and Ga Diffusion Concerning InAs Self-Assembled Quantum Dots on GaAs(100) as a Function of Growth Interruption Time
• InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
• Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
• Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures
• Crystallographic Properties of Closely Stacked InAs Quantum Dots Investigated by Ion Channeling
• Threading Dislocations in Multilayer Structure of InAs Self-Assembled Quantum Dots
• Dynamic Properties of InAs Self-Assembled Quantum Dots Evaluated by Capacitance-Voltage Measurements
• Interdiffusion between InAs Quantum Dots and GaAs Matrices
• Narrow Photoluminescemce Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures
• Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer
• New Optical Memory Structure Using Self-Assembled InAs Quantum Dots
• Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots
• Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
• InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
• Performance of All-Optical Switch Utilizing the Spin-Dependent Transient Rotation in a Multiple-Quantum-Well Etalon
• Large Lateral Modulation in InAs/GaAs In-Plane Strained Superlattice on Slightly Misoriented (110) InP Substrate
• Band-Gap Renormalization and Excitonic Effects in Tunneling in Asymmetric Double Quantum Wells
• Phonon Assisted Tunneling and Peak-to-Valley Ratio in a Magnetically Confined Quasi Zero Dimensional InGaAs/InAlAs Resonant Tunneling Diode
• InGaAs/GaAs Tetrahedral-Shaped Recess Quantum Dot (TSR-QD)Technology (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
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• Gas Source MBE Growth of GaAs/AlGaAs Heterojunction Bipolar Transistor with a Carbon Doped Base Using Only Gaseous Sources
• Selective Growth of GaAs by Pulsed-Jet Epitaxy (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
• Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
• Differences in Tunneling Time between 77 K and Room Temperature for Tunneling Biquantum Wells
• Fast Recovery from Excitonic Absorption Bleaching in Type-II : GaAs/AlGaAs/AlAs Tunneling Biquantum Well
• Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
• Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
• High Magnetic Field Study of Ballistic Transport in a Resonant-Tunneling Hot-Electron Transistor (RHET)
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• Determination of the GaAs/AlAs Superlattice Period from the First-Order Superlattice Bragg Reflection
• Low-Power, High-Speed Integrated Logic with GaAs MOSFET : B-1: GaAs IC
• Evaluation of change of cerebral circulation by SpO_2 in preterm infants with apneic episodes using near infrared spectroscopy
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• Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field Effect Transistors without Using Transfer Processes
• Surface Polaritons Due to the Folded Optical Phonons in GaAs/AlAs Superlattices
• Wannier-Stark Localization in Superlattices
• Photoreflectance Spectra from GaAs Buffer Layer of GaAs/AlAs Multiple Quantum Well/GaAs Buffer/GaAs Substrate
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• Fidelity of Spin Qubit Using Coupled Semiconductor Quantum Dots
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• Direct Observation of Al_xGa_As/GaAs Superlattices by REM
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• Electron Spin Flip by Antiferromagnetic Coupling between Semiconductor Quantum Dots
• Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
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• Negative Differential Resistance of Strain-Free InGaAs/AlAsSb Resonant Tunneling Barrier Structures Lattice-Matched to InP
• Fast Recovery of Excitonic Absorption Peaks in Tunneling Bi-Quantum-Well Structures
• Picosecond Characterization of InGaAs/InAlAs Resonant Tunneling Barrier Diode by Electro-Optic Sampling
• Numerical Study of Effect of Fabrication Damage on Carrier Dynamics in MQW Narrow Wires
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• Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
• Development of Electrically Driven Single-Quantum-Dot Device at Optical Fiber Bands
• Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-μm Optical-Fiber Band
• Si Quantum Dot Formation with Low-Pressure Chemical Vapor Deposition
• Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
• Electron Spin Flip by Antiferromagnetic Coupling between Semiconductor Quantum Dots

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