Electronic State of Metalloporphyrins

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1988-01-20

著者

• Imamura K

  Fujitsu Lab. Ltd. Kanagawa Jpn

• 羽路 伸夫

  横浜国立大学大学院工学研究院

• SUGAHARA Masanori

  Faculty of Engineering, Yokohama National University

• HANEJI Nobuo

  Faculty of Engineering, Yokohama National University

• KANEDA Hisayoshi

  Faculty of Engineering, Yokohama National University

• Imamura Kimitake

  Faculty Of Engineering Yokohama National University

• Kaneda Hisayoshi

  Division Of Electrical And Computer Engineering Faculty Of Engineering Yokohama National University

• Kaneda Hisayoshi

  Faculty Of Engineering Yokohama National University

• Sugahara Masanori

  Faculty Of Engineering Yokohama National University

• Sugahara Masanori

  Division Of Electrical And Computer Engineering Faculty Of Engineering Yokohama National University

• Niki K

  California Inst. Technol. Ca

• Niki Katsumi

  Faculty Of Engineering Yokohama National University

• Sugahara M

  Division Of Electrical And Computer Engineering Faculty Of Engineering Yokohama National University

• TAKANO Wataru

  Faculty of Engineering, Yokohama National University

• Takano Wataru

  Faculty Of Engineering Yokohama National University

関連論文

• 液相堆積法によるSiO_2膜について
• New Optical Memory Structure Using Self-Assembled InAs Quantum Dots
• Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
• Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
• PECVDによる低誘電率層間絶縁膜用a-C:F膜の合成( : 低誘電率層間膜及び配線技術)
• Anomalous Effect in La_Sr_xCuO_4 of Doping Level x=1/4^n
• 五層非対称結合量子井戸の作製トレランスに関する理論検討(量子効果デバイス(光信号処理,LD,光増幅,変調等)と集積化技術,一般,材料デバイスサマーミーティング)
• 五層非対称結合量子井戸の作製トレランスに関する理論検討(量子効果デバイス(光信号処理,LD,光増幅,変調等)と集積化技術,一般,材料デバイスサマーミーティング)
• Electroabsorptive Properties of InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well (FACQW)
• Improved Etched Surface Morphology in Electron Cyclotron Resonance-Reactive Ion Etching of GaN by Cyclic Injection of CH_4/H_2/Ar and O_2 with Constant Ar Flow
• GaAs系5層非対称結合量子井戸(FACQW)における巨大な電界誘起屈折率変化と高性能光変調器への応用(量子効果型光デバイス・光集積化技術, 及び一般)
• 液相堆積シリコン酸化膜/シリコン界面特性の改善
• A Resonant-Tunneling Bipolar Transistor (RBT) : A New Functional Device with High Current Gain
• A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)
• A WSi/TiN/Au Gate Self-Aligned GaAs MESFET with Selectively Grown n^+-Layer using MOCVD
• Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions
• GaAs系5層非対称結合量子井戸(FACQW)における巨大な電界誘起屈折率変化と高性能光変調器への応用(量子効果型光デバイス・光集積化技術, 及び一般)
• Observation of Giant Electrorefractive Effect in Five-Layer Asymmetric Coupled Quantum Wells (FACQWs)
• Electron Cyclotron Resonance-Reactive Ion Etching of III-V Semiconductors by Cyclic Injection of CH_4/H_2/Ar and O_2 with Constant Ar Flow
• パルスレーザ蒸着(PLD)法による(Ba,Sr)TiO_3薄膜の作製における下部電極について(ゲート絶縁膜,容量膜,機能膜及びメモリ技術)
• パルスレーザ蒸着法によるPt上への(Ba,Sr)TiO_3薄膜の多段階成膜(物性,成膜,加工,プロセス : 強誘電体薄膜とデバイス応用)
• 強誘電体ゲートFETを用いたCMFS論理回路の検討(デバイス/回路動作 : 強誘電体薄膜とデバイス応用)
• Fabrication and Optical Characterization of Five-Layer Asymmetric Coupled Quantum Well (FACQW)
• Electron Cyclotron Resonance-Reactive Ion Beam Etching of InP by Cyclic Injection of CH_4/H_2/Ar and O_2(Semiconductors)
• 液相堆積法による低誘電率シリコン酸化膜
• Complementary Digital Logic Using Resistively Coupled Single-Electron Transistor
• Complementary Digital Logic Using Resistively Coupled Single Electron Transistor
• Dynamic Characteristics of Inverter Circuits Using Single Electrorn Transistors
• ゲート絶縁膜に液相堆積法によるSiO_2膜を用いたSiMOSダイオードの諸特性
• Experiment on Phase-Quantum-Tunneling Device
• Macroscopic Quantum Effect Conjugate to Josephson Effect
• 液相堆積法(Liquid Phase Deposition)によるSi-MOSダイオードのウエハー前処理について
• Discontinuity of Magnetic Flux Trapped in Multiply Connected Superconductor
• Field-Effect Induced Sinusoidal Conductivity Variation of NbN Granular Thin Film
• New Logic Circuit with DC Parametric Excitation
• Synthesis of (Ba,Sr)TiO_3 Thin Films by Plasma-Activated Pulsed Laser Deposition Technique
• Electronic State of Metalloporphyrins
• 電界を用いた増速液相堆積法SiO_2膜の諸特性
• Theoretical Study of Josephson Junction with Double Barriers
• Flux and Charge Quanta in Junctions and Macroscopic Quantum Effect
• Single Electron Transfer Logic Gate Family
• Study of the Physical Properties of High-Temperature Oxide Superconductors Based on Superfluidity Models
• Observation of Single-Electron Charging Effect in BiSrCaCuO Granular Thin Films
• Superconductive Granular Thin Film and Phase Quantum Tunnel Device
• Quantized Electrical Field Effect in Granular Superconductor Thin Films
• Single-Electron-Tunneling Effect in Nanoscale Granular Microbridges ( Quantum Dot Structures)
• Possibility of Superdielectric : A New Ordered Phase in Copper Oxide Compound with CuO_2 Layers
• Fabrication of Pd Nanostructures with Scanning Tunneling Microscope
• Structure-Parameter Dependence of Modality of Macroscopic Quantum Effect in Superconductor Junction (II) : Linked Junction
• High-Temperature Superconductivity and Normal-State Anomaly
• Possibility of Bose-Einstein Condensation of Excitons in Quasiparticle-Injected Superconductor
• Current-Induced Transition Characteristics of Superconductors in Longitudinal Magnetic Field
• Dynamics of High-Frequency AC Process in Superconductor
• Oscillation of Orderparameter in the Nonequilibrium Superconductivity Caused by Quasiparticle Injection
• Complementary Digital Logic Using Resistively Coupled Single-Electron Transistor
• Single-Electron-Tunneling Effect in Nanoscale Granular Microbridges
• Structure-Parameter Dependence of Modality of Macroscopic Quantum Effect in Superconductor Junction (I) —Tunnel-Type Junction—
• Single Electron Transfer Logic Gate Family

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