On a Possibility of Wavelength-Domain-Multiplication Memory Using Quantum Boxes
スポンサーリンク
概要
- 論文の詳細を見る
A new use of quantum boxes for wavelength-domain-multiplication optical memory applications is proposed. Persistent spectral-hole burning mechanism based on photo-creation of electron-hole pairs and their spatial separation by carrier tunneling is described. We discuss the feasibility of its application to optical data storage with emphasis on the memory duration and the multiplexing factor, that is, the possible number of bits stored in a laser-beam spot following the discussion by Moerner and Levenson.
- 社団法人応用物理学会の論文
- 1995-02-15
著者
関連論文
- Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
- Performance of All-Optical Switch Utilizing the Spin-Dependent Transient Rotation in a Multiple-Quantum-Well Etalon
- Large Lateral Modulation in InAs/GaAs In-Plane Strained Superlattice on Slightly Misoriented (110) InP Substrate
- Band-Gap Renormalization and Excitonic Effects in Tunneling in Asymmetric Double Quantum Wells
- Novel InGaAs/GaAs Quantum Dot Structures Formed in Tetrahedral-Shaped Recesses on (111) B GaAs Substrate Using Metalorganic Vapor Phase Epitaxy
- A Resonant-Tunneling Bipolar Transistor (RBT) : A New Functional Device with High Current Gain
- A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)
- Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions
- Structure Analysis of GaAs-AlAs Superlattice Grown by Molecular Beam Epitaxy
- Effect of H_2 on the Quality of Si-Doped Al_xGa_As Grown by MBE
- Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
- Differences in Tunneling Time between 77 K and Room Temperature for Tunneling Biquantum Wells
- Fast Recovery from Excitonic Absorption Bleaching in Type-II : GaAs/AlGaAs/AlAs Tunneling Biquantum Well
- Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
- Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
- Determination of the GaAs/AlAs Superlattice Period from the First-Order Superlattice Bragg Reflection
- A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
- Back-Gated Field Effect in a Double Two-Dimensional Electron Gas Structure
- Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
- Surface Polaritons Due to the Folded Optical Phonons in GaAs/AlAs Superlattices
- Wannier-Stark Localization in Superlattices
- Photoreflectance Spectra from GaAs Buffer Layer of GaAs/AlAs Multiple Quantum Well/GaAs Buffer/GaAs Substrate
- A Static Random Access Memory Cell Using a Double-Emitter Resonant-Tunneling Hot Electron Transistor for Gigabit-Plus Memory Applications
- Direct Observation of Al_xGa_As/GaAs Superlattices by REM
- Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
- Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE
- On a Possibility of Wavelength-Domain-Multiplication Memory Using Quantum Boxes
- Schottky Barrier Height of Al n-In_Ga_As and Nb/n-In_Ga_As Diodes
- Time Evolution of Excitonic Absorption Bleaching of Resonant Tunneling Bi-Quantum-Well Structures
- Negative Differential Resistance of Strain-Free InGaAs/AlAsSb Resonant Tunneling Barrier Structures Lattice-Matched to InP
- Fast Recovery of Excitonic Absorption Peaks in Tunneling Bi-Quantum-Well Structures
- Picosecond Characterization of InGaAs/InAlAs Resonant Tunneling Barrier Diode by Electro-Optic Sampling
- Numerical Study of Effect of Fabrication Damage on Carrier Dynamics in MQW Narrow Wires
- Fabrication of Sub-100 nm Wires and Dots in GaAs/AlGaAs Multiquantum Well Using Focused Ion Beam Lithography
- InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method