Novel InGaAs/GaAs Quantum Dot Structures Formed in Tetrahedral-Shaped Recesses on (111) B GaAs Substrate Using Metalorganic Vapor Phase Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-08-30

著者

• YOKOYAMA Naoki

  Fujitsu Laboratories Ltd.

• SUGIYAMA Yoshihiro

  Fujitsu Limited

• MUTO Shunichi

  Fujitsu Laboratories Ltd.

• Sugiyama Y

  Fujitsu Laboratories Ltd.

• SAKUMA Yoshiki

  Fujitsu limited

• Muto Shigeki

  Department Of Physics School Of Science Tokai University

• 武藤 真三

  山梨大学

• Muto S

  Kek Ibaraki

• Yokoyama Naoki

  Department of Pediatrics, Kobe University Graduate School of Medicine

• Sakuma Yoshiki

  Fujitsu Laboratories Ltd.

• Sugiyama Yoshinobu

  Fujitsu Laboratories Ltd.

• Yokoyama N

  Fujitsu Laboratories Ltd.

• Yokoyama Naoki

  Institute For Nano Quantum Information Electronics The University Of Tokyo

• Sugiyama Yoshihiro

  Fujitsu Laboratories Ltd.

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