Determination of the GaAs/AlAs Superlattice Period from the First-Order Superlattice Bragg Reflection
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-06-20
著者
-
KOMIYA Satoshi
Fujitsu Laboratories Ltd.
-
MUTO Shunichi
Fujitsu Laboratories Ltd.
-
Iida Atsuo
Photon Factory, Institute of Materials Structure Science
-
Iida Atsuo
Photon Factory Institute Of Materials Structure Science
-
Muto Shunichi
Fujitsu Ltd.
-
Komiya Satoshi
Fujitsu Laboratories Lid.
-
Komiya Satoshi
Fujitsu Ltd.
-
UMEBU Itsuo
Fujitsu Laboratories Limited
-
Umebu I
Fujitsu Ltd.
-
Tanaka C
Fujitsu Ltd.
-
TANAKA Chikako
Fujitsu Ltd.
関連論文
- 30. Dynamic Response of Local Layer and Molecular Orientation in Smectic Liquid Crystals by Time Resolved X-ray Micro-Diffraction(poster presentation,Soft Matter as Structured Materials)
- Characterization of ZnSe/GaAs(001) Heteroepitaxial Interfaces by X-Ray Reflectivity Measurement
- Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
- Analysis of the intralayer molecular orientation in the B1 phase of a bent-core liquid crystal molecule using X-ray microbeam(New Frontiers in Colloidal Physics : A Bridge between Micro- and Macroscopic Concepts in Soft Matter)
- Performance of All-Optical Switch Utilizing the Spin-Dependent Transient Rotation in a Multiple-Quantum-Well Etalon
- Large Lateral Modulation in InAs/GaAs In-Plane Strained Superlattice on Slightly Misoriented (110) InP Substrate
- Band-Gap Renormalization and Excitonic Effects in Tunneling in Asymmetric Double Quantum Wells
- Novel InGaAs/GaAs Quantum Dot Structures Formed in Tetrahedral-Shaped Recesses on (111) B GaAs Substrate Using Metalorganic Vapor Phase Epitaxy
- Photoluminescence Intensity in InGaAsP/InP Double-Heterostructures
- X-Ray Reflectometry and Infrared Analysis of Native Oxides on Si(100) Formed in Chemical Treatment
- X-ray Absorption Near Edge Structure (XANES) of CuInSe_2, Brass and Phosphor Bronze by Photoacoustic Method : Photoacoustic Spectroscopy
- X-Ray Photoacoustic Spectroscopy of Brass
- Photoacoustic Response to X-Ray Absorption in Copper and Brass
- A Resonant-Tunneling Bipolar Transistor (RBT) : A New Functional Device with High Current Gain
- A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)
- Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions
- Structure Analysis of GaAs-AlAs Superlattice Grown by Molecular Beam Epitaxy
- Effect of H_2 on the Quality of Si-Doped Al_xGa_As Grown by MBE
- Studies of Photoluminescence Intensity in the InP/InGaAsP/InP Double Heterostructure
- Analysis of Contamination Layer of InP During LPE Process by Synchrotron Radiation-Excited X-Ray Fluorescence : Surfaces, Interfaces and Films
- Chemical State Mapping by X-Ray Fluorescence Using Absorption Edge Shifts : Techniques, Instrumentations and Measurement
- Characterization of Co-O Thin Films by X-Ray Fluorescence Using Chemical Shifts of Absorption Edges
- A Scanning X-Ray Fluorescence Microprobe with Synchrotron Radiation
- Determination of the Stokes-Poincare Parameters for a Synchrotron X-Ray Beam by Multiple Bragg Scattering
- Photoacoustic EXAFS of Solid Phase
- Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
- Differences in Tunneling Time between 77 K and Room Temperature for Tunneling Biquantum Wells
- Fast Recovery from Excitonic Absorption Bleaching in Type-II : GaAs/AlGaAs/AlAs Tunneling Biquantum Well
- Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
- Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
- Dynamic Behaviour of the local Layer Structure of Antiferroelectric Liquid Crystals under a High Electric Field Measured by Time-resolved Synchrotron X-Ray Microbeam Diffraction
- X-Ray Analysis of the Layer Structure in the Chiral Smectic Phase Showing V-shaped Switching
- Structure of Needlelike Defect in Homogeneously Aligned Cells of a Ferroelectric Liquid Crystal Mixture Studied Using X-Ray Microbeam
- Spontaneous Layer Twist in a Stripe Texture of Chiral Ferroelectric Smectics Observed by Synchrotron X-Ray Microdiffraction
- Study on Molecular Dimerization Inducing the Antiferroelectric Liquid Crystalline Phase by Measuring the Smectic Layer Thickness in Various Compounds
- Influence of the Optical Purity on the Smectic Layer Thickness and the Transition Order in Enantiomeric Mixtures of an Antiferroelectric Liquid Crystal
- Wavelength-Dispersive Total Reflection X-Ray Fluorescence with High-Brilliance Undulator Radiation at SPring-8
- Grazing Incidence X-Ray Diffraction Study of Arachidic Acid Monolayer on Cyanine Dye Aqueous Solution
- Determination of the GaAs/AlAs Superlattice Period from the First-Order Superlattice Bragg Reflection
- High-Density Layer at the SiO_2/Si Interface Observed by Difference X-Ray Reflectivity
- High-Accuracy X-ray Reflectivity Study of Native Oxide Formed in Chemical Treatment
- EBIC Observation on the InP/InGaAs/InP Heterostructure Photodiode
- Admittance Study of a Single Electron Trap in the LPE InP/InGaAsP Heterostructure Diode
- Transmission Electron Microscopic Observation of Misfit Dislocation in InP/InGaAsP Double -Heterostructures
- Inhomogeneous Distribution of Avalanche Multiplication in InP APDs
- Calculation of Impurity Concentrations in LPE InP Layers
- Local Layer Structures in Ferroelectric Liquid Crystal Cells Filled with a Material Which Exhibits Cholesteric-Chiral Smectic C Phase Transition
- Characterization of the Local Layer Structure of a Narrow Wall in a Surface Stabilized Ferroelectric Liquid Crystal Using Synchrotron X-Ray Micro-Diffraction
- Characterization of the Local Layer Structure at a Broad Wall in a Surface Stabilized Ferroelectric Liquid Crystal during Electric Field Application Using Synchrotron X-Ray Microdiffraction
- Characterization of the Local Layer Structure of a Broad Wall in a Surface Stabilized Ferroelectric Liquid Crystal Using Synchrotron X-Ray Micro-Diffraction
- Correction of the Self-Absorption Effect in Fluorescence X-Ray Absorption Fine Structure
- A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
- Back-Gated Field Effect in a Double Two-Dimensional Electron Gas Structure
- Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
- Surface Polaritons Due to the Folded Optical Phonons in GaAs/AlAs Superlattices
- Wannier-Stark Localization in Superlattices
- Photoreflectance Spectra from GaAs Buffer Layer of GaAs/AlAs Multiple Quantum Well/GaAs Buffer/GaAs Substrate
- TEM Observation of Dark Defects Appearing in InGaAsP/InP Double-Heterostructure Light Emitting Diodes Aged at High Temperature
- TEM Investigation of Dislocation Loops in Undoped InGaAsP and InGaP Layers Grown by Liquid Phase Epitaxy
- Composition-Modulated Structures in InGaAsP and InGaP Liquid Phase Epitaxial Layers Grown on (001) GaAs Substrates
- Comparison of Defect Formation in InGaAsP/InP and GaAlAs/GaAs : B-2: LD AND LED-1
- A Molecular and Jon-Beam Epitaxy System for the Growth of III-V Compound Semiconductors Using a Mass-Separated, Low-Energy Group-V Jon Beam
- Molecular Beam Epitaxy of InP Using Low Energy P^+ Ion Beam
- EXAFS Study of Cation Sites in In-thiospinel Compound FeIn_2S_4
- A Novel Hair Analysis for Trace Elements on Hair Cross Section by Synchrotron Radiation X-Ray Fluorescence Imaging with X-Ray Microprobe:Two-Dimensional Distribution of Lead and Zinc on Smelter Hair
- A Static Random Access Memory Cell Using a Double-Emitter Resonant-Tunneling Hot Electron Transistor for Gigabit-Plus Memory Applications
- Direct Observation of Al_xGa_As/GaAs Superlattices by REM
- Dependence of Rocking Curve for Thin In_Ga_xAs_P_y Layer on Thickness in a Symmetric Bragg Case
- Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
- Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE
- On a Possibility of Wavelength-Domain-Multiplication Memory Using Quantum Boxes
- Schottky Barrier Height of Al n-In_Ga_As and Nb/n-In_Ga_As Diodes
- Effect of an InP Buffer Layer on Photoluminescence Efficiency of an InGaAsP Layer
- Thermal Degradation of InP/InGaAsP/InP DH Structure
- Life Test of GaAs DH Lasers at Room Temperature
- Time Evolution of Excitonic Absorption Bleaching of Resonant Tunneling Bi-Quantum-Well Structures
- Negative Differential Resistance of Strain-Free InGaAs/AlAsSb Resonant Tunneling Barrier Structures Lattice-Matched to InP
- Fast Recovery of Excitonic Absorption Peaks in Tunneling Bi-Quantum-Well Structures
- Picosecond Characterization of InGaAs/InAlAs Resonant Tunneling Barrier Diode by Electro-Optic Sampling
- X-Ray Fluorescence Analysis of Hg in SiO_2 Films Deposited by Hg-Sensitized Photo-CVD
- Fabrication and Characterization of Multilayer Zone Plate for Hard X-Rays : Techniques, Instrumentations and Measurement
- Numerical Study of Effect of Fabrication Damage on Carrier Dynamics in MQW Narrow Wires
- Fourier Analysis of Interference Structure in X-Ray Specular Reflection from Thin Films
- Suppression of the Phase Transition to C54 TiSi_2 due to Epitaxial Growth of C49 TiSi_2 on Si(001) Substrates in Silicidation Process
- Grazing Incidence X-Ray Diffraction Study on Effect of Implanted BF^+_2 and Linewidth on Titanium Silicidation
- Transmission Electron Microscopy Observation of CoSi_x Spikes in Si Substrates during Co-silicidation Process
- Fine Adjustment Based on Model for X-Ray Absorption Fine Structure of Ni-Fe Alloy
- Changes in the Distributions of Chemical Elements in Regenerating Scales of Carp, Cyprinus carpio, Studied by SRXRF Imaging
- Fabrication of Sub-100 nm Wires and Dots in GaAs/AlGaAs Multiquantum Well Using Focused Ion Beam Lithography
- InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method
- A Simultaneous RHEED/AES Combined System
- Trace element concentrations in iron type cosmic spherules determined by the SR-XRF method
- Spontaneous Layer Twist in a Stripe Texture of Chiral Ferroelectric Smectics Observed by Synchrotron X-Ray Microdiffraction
- X-Ray Analysis of the Layer Structure in the Chiral Smectic Phase Showing V-shaped Switching
- Characterization of the Local Layer Structure of a Narrow Wall in a Surface Stabilized Ferroelectric Liquid Crystal Using Synchrotron X-Ray Micro-Diffraction
- Local Layer Structures in Ferroelectric Liquid Crystal Cells Filled with a Material Which Exhibits Cholesteric-Chiral Smectic C Phase Transition
- Dynamic Behaviour of the Local Layer Structure of Antiferroelectric Liquid Crystals under a High Electric Field Measured by Time-resolved Synchrotron X-Ray Microbeam Diffraction
- Characterization of ZnSe/GaAs(001) Heteroepitaxial Interfaces by X-Ray Reflectivity Measurement