TEM Observation of Dark Defects Appearing in InGaAsP/InP Double-Heterostructure Light Emitting Diodes Aged at High Temperature
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1981-07-05
著者
-
KOMIYA Satoshi
Fujitsu Laboratories Ltd.
-
Kotani Toshiya
Microelectronics Laboratory Toshiba Corporation
-
Ueda Osamu
Fujitsu Laboratories Ltd.
-
Ueda Osamu
Institute Of Pharmaceutical Science Hiroshima University School Of Medicine
-
Komiya S
Fujitsu Laboratories Ltd.
-
Komiya Satoshi
Fujitsu Laboratories Lid.
-
Ueda O
Graduate School Of Biomedical Sciences Hiroshima University
-
Ueda Osamu
Fujitsu Laboratories Lid.
-
Kotani Tsuyoshi
Fujitsu Laboratories Limited
-
Komiya S
Fujitsu Lab. Ltd. Atsugi Jpn
-
Kotani Tokumi
Microelectronics Laboratory Toshiba Corporation
-
YAMAKOSHI Shigenobu
Fujitsu Laboratories Ltd.
-
Yamakoshi Shigenobu
Fujitsu Laboratories Limited
-
Kotani T
Microelectronics Laboratory Toshiba Corporation
関連論文
- Further Metabolism of 2-Formylaminofluorene, a Metabolite of 2-Aminofluorene, in Rats
- Characterization of ZnSe/GaAs(001) Heteroepitaxial Interfaces by X-Ray Reflectivity Measurement
- ROLE OF MAMMALIAN TISSUES AND INTESTINAL BACTERIA IN N-ACYLATION
- Photoluminescence Intensity in InGaAsP/InP Double-Heterostructures
- X-Ray Reflectometry and Infrared Analysis of Native Oxides on Si(100) Formed in Chemical Treatment
- Metabolism of Nitropolycyclic Aromatic Hydrocarbons in Animals, Fish and Intestinal Bacteria (Proceedings of the 18th Symposium on Toxicology, and Environmental Health)
- Studies of Photoluminescence Intensity in the InP/InGaAsP/InP Double Heterostructure
- Analysis of Contamination Layer of InP During LPE Process by Synchrotron Radiation-Excited X-Ray Fluorescence : Surfaces, Interfaces and Films
- Deacylation of N-Formylanilines and N-Acetylanilines by Rat Liver Formamidase
- Defect Issues in III-V Alloy Semiconductors and Their Influence on the Degradation of Optical Devices
- Highly Accurate Process Proximity Correction Based on Empirical Model for 0.18 μm Generation and Beyond
- Development of An Accurate Optical Proximity Correction System for 1 Gbit Dynamic Random Access Memory Fabrication
- High Two-Dimensional Electron Gas Mobility Enhanced by Ordering in InGaAs/N-InAlAs Heterostructures Grown on (110)-Oriented InP Substrates by Molecular Beam Epitaxy
- Wavelength-Dispersive Total Reflection X-Ray Fluorescence with High-Brilliance Undulator Radiation at SPring-8
- Determination of the GaAs/AlAs Superlattice Period from the First-Order Superlattice Bragg Reflection
- High-Density Layer at the SiO_2/Si Interface Observed by Difference X-Ray Reflectivity
- High-Accuracy X-ray Reflectivity Study of Native Oxide Formed in Chemical Treatment
- Fabrication of a New Pyroelectric Infrared Sensor Using MgO Surface Micromachining
- EBIC Observation on the InP/InGaAs/InP Heterostructure Photodiode
- Admittance Study of a Single Electron Trap in the LPE InP/InGaAsP Heterostructure Diode
- Transmission Electron Microscopic Observation of Misfit Dislocation in InP/InGaAsP Double -Heterostructures
- Inhomogeneous Distribution of Avalanche Multiplication in InP APDs
- Calculation of Impurity Concentrations in LPE InP Layers
- Observation of Atomic Steps on Vicinal Si(111) Annealed in Hydrogen Gas Flow by Scanning Tunneling Microscopy
- Control of GaAs on Si Interface Using Atomic Layer Epitaxy
- Observation of Atomic Structure by Scanning Tunneling Microscopy of Vicinal Si(100) Surface Annealed in Hydrogen Gas
- Liquid Phase Epitaxial Growth of In_Ga_xP
- GaP Liquid Phase Epitaxial Growth Using a Vertical Furnace System
- TEM Observation of Dark Defects Appearing in InGaAsP/InP Double-Heterostructure Light Emitting Diodes Aged at High Temperature
- Transmission Electron Microscope Observation of Mechanically Damaged InGaAsP/InP Double-Heterostructure Light-Emitting Diode
- TEM Investigation of Dislocation Loops in Undoped InGaAsP and InGaP Layers Grown by Liquid Phase Epitaxy
- Composition-Modulated Structures in InGaAsP and InGaP Liquid Phase Epitaxial Layers Grown on (001) GaAs Substrates
- Comparison of Defect Formation in InGaAsP/InP and GaAlAs/GaAs : B-2: LD AND LED-1
- A Molecular and Jon-Beam Epitaxy System for the Growth of III-V Compound Semiconductors Using a Mass-Separated, Low-Energy Group-V Jon Beam
- Molecular Beam Epitaxy of InP Using Low Energy P^+ Ion Beam
- EXAFS Study of Cation Sites in In-thiospinel Compound FeIn_2S_4
- Dependence of Rocking Curve for Thin In_Ga_xAs_P_y Layer on Thickness in a Symmetric Bragg Case
- Transmission Electron Microscope Study of Defects in Cd-Diffused n-InP Substrates
- Effect of an InP Buffer Layer on Photoluminescence Efficiency of an InGaAsP Layer
- Thermal Degradation of InP/InGaAsP/InP DH Structure
- Life Test of GaAs DH Lasers at Room Temperature
- Suppression of the Phase Transition to C54 TiSi_2 due to Epitaxial Growth of C49 TiSi_2 on Si(001) Substrates in Silicidation Process
- Grazing Incidence X-Ray Diffraction Study on Effect of Implanted BF^+_2 and Linewidth on Titanium Silicidation
- Atomic Structure of Ordered InGaP Crystals Grown on (001)GaAs Substrates by Metalorganic Chemical Vapor Deposition
- Transmission Electron Microscopy Observation of CoSi_x Spikes in Si Substrates during Co-silicidation Process
- Fine Adjustment Based on Model for X-Ray Absorption Fine Structure of Ni-Fe Alloy
- Slow Degradation Mechanism of GaAlAs Light-Emitting Diodes : B-3: LASER
- A Simultaneous RHEED/AES Combined System
- Characterization of ZnSe/GaAs(001) Heteroepitaxial Interfaces by X-Ray Reflectivity Measurement