Atomic Structure of Ordered InGaP Crystals Grown on (001)GaAs Substrates by Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
InGaP crystals grown on (001)GaAs substrates by metalorganic chemical vapor deposition are structurally evaluated by transmission electron microscopy. High-resolution electron microscopy observation and electron diffraction analysis of both the (110) and the (110) cross-section specimens strongly suggest that ordering of column III atoms on only two sets of the (111) planes with doubling in periodicity of (111) layers, i.e., In/Ga/In/Ga/In/Ga. . ., is occurring in the crystal. The ordering of the crystal is not perfect, and the ordered regions are assumed to be plate-like microdomains.
- 社団法人応用物理学会の論文
- 1987-11-20
著者
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UMEBU Itsuo
Fujitsu Laboratories Limited
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Ueda Osamu
Fujitsu Laboratories Lid.
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KOMENO Junji
Fujitsu Laboratories Ltd.
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TAKIKAWA Masahiko
Fujitsu Laboratories Ltd.
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