Transmission Electron Microscope Study of Defects in Cd-Diffused n-InP Substrates
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概要
- 論文の詳細を見る
Various crystal defects induced in Cd-diffused n-InP substrates have been investigated by transimission electron microscopy. Two types of defects, bulk defects and surface defects, were observed. The former type of defect consists of microdefects uniformly distributed in the diffused area. They are non-strucrural and 100-1000 Å in diameter. These defects are generated in both the diffused regions with and without control of the phosphor pressure. The latter type of defect consists of precipitate-like defects accompanied by dislocation tangles and dislocation networks. These are locally generated and are expected to be eliminated by improving the chemical treatment before diffusion.
- 社団法人応用物理学会の論文
- 1984-12-20
著者
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ISHIKAWA Hiroshi
Fujitsu Laboratories Ltd.
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Ueda O
Fujitsu Lab. Ltd. Atsugi
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Ueda Osamu
Fujitsu Laboratories Ltd.
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UMEBU Itsuo
Fujitsu Laboratories Limited
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Ueda Osamu
Fujitsu Laboratories Lid.
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Umebu Itsuo
Fujitsu Laboratories Ltd.
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Ishikawa Hiroshi
Fujitsu Laboratories Limited
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