Lasing-Induced Change in the Differential Resistance of Stripe Geometry Ga_<1-x>Al_xAs DH Lasers

スポンサーリンク

概要

• 論文の詳細を見る

• The lasing-induced change in the differential resistance is measured for various types of stripe geometry laser, and a model is given that explains the lasing induced change quantitatively to some extent. The amount of the lasing-induced reduction in the differential resistance is mainly determined by a parameter that limits the carrier supply into the active layer. The exsistence of a non-lasing region at the edge of the stripe and lateral carrier diffusion also decrease the amount of the reduction. In narrow-stripe lasers the amount of the resuction is small due to lateral carrier diffusion. From the moderate change in the differential resistance near the threshold, the spontaneous emission factor representing the contribution of the spontaneous emission to the lasing mode is estimated for various types of stripe laser.

• 社団法人応用物理学会の論文
• 1979-02-05

著者

• ISHIKAWA Hiroshi

  Fujitsu Laboratories Ltd.

• TAKUSAGAWA Masahito

  Fujitsu Laboratories Limited

• HANAMITSU Kiyoshi

  Fujitsu Laboratories Ltd.

• Ishikawa Hiroshi

  Fujitsu Laboratories Limited

• Hanamitsu Kiyoshi

  Fujitsu Laboratories Limited

関連論文

• Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40Gbit/s
• Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer
• In_Ga_AS/InAlGaAs/InGaP Strained Double Quantum Well Lasers on In_Ga_As Ternary Substrate
• Transmission Electron Microscope Study of Defects in Cd-Diffused n-InP Substrates
• Degradations of Optically-Pumped GaAlAs Double Heterostructures at Elevated Temperatures
• Visible GaAlAs Laser with a Buried-Convex Waveguide Structure : B-4: LD AND LED-2
• Lasing-Induced Change in the Differential Resistance of Stripe Geometry Ga_Al_xAs DH Lasers

スポンサーリンク