Thermal Degradation of InP/InGaAsP/InP DH Structure

概要

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LPE-grown undoped InP/InGaAsP/InP samples were annealed under a phosphorus pressure produced by either an InP cover piece, phosphine or red phosphorus. The change in photoluminescence (PL) intensity of the quaternary layer before and after annealing was investigated as a function of the excitation power density. Even when annealed under a phosphorus pressure, a condition under which surface degradation is never observed, the PL intensity decreases. The rate of decrease of the PL intensity depends on the excitation power density. Because the rate is independent of the quaternary layer thickness, the decrease in the PL intensity is ascribed to a decrease in the internal quantum efficiency of the quaternary layer rather than to an increase in the interface recombination velocity. Furthermore, the dependence of the decrease in PL intensity on the excitation power was analyzed theoretically and the non-radiative carrier lifetime estimated. The thermal degradation of double heterostructure (DH) samples can be evaluated even when the surfaceremains unchanged.
社団法人応用物理学会の論文
1985-08-20