Room-Temperature Continuous Wave Operation of InGaN Laser Diodes with Vertical Conducting Structure on SiC Substrate

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Continuous Wave Operation of InGaN Laser Diodes Fabricated on SiC Substrates(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Continuous Wave Operation at Room Temperature of InGaN Laser Diodes Fabricated on 4H-SiC Substrates
Room-Temperature Continuous Wave Operation of InGaN Laser Diodes with Vertical Conducting Structure on SiC Substrate
Continuous-Wave Operation at 250 K of InGaN Multiple Quantum Well Laser Diodes Grown on 6H-SiC with Vertical Conducting Structure
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Defect Structures of AlN on Sapphire (0001) Grown by Metalorganic Vapor-Phase Epitaxy with Different Preflow Sources
Internal Strain of Self-Assembled InxGa1-xAs Quantum Dots Calculated to Realize Transverse-Magnetic-Mode-Sensitive Interband Optical Transition at Wavelengths of 1.5 μm bands

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