InGaN Laser Diode Grown on 6H-SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy

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Continuous Wave Operation of InGaN Laser Diodes Fabricated on SiC Substrates(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Continuous Wave Operation at Room Temperature of InGaN Laser Diodes Fabricated on 4H-SiC Substrates
Room-Temperature Continuous Wave Operation of InGaN Laser Diodes with Vertical Conducting Structure on SiC Substrate
Continuous-Wave Operation at 250 K of InGaN Multiple Quantum Well Laser Diodes Grown on 6H-SiC with Vertical Conducting Structure
InGaN Laser Diode Grown on 6H-SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy
Thermal Degradation of InP/InGaAsP/InP DH Structure
Facet Degradation of AlGaInP Visible Semiconductor Lasers with Facet Passivation
Defect Structures of AlN on Sapphire (0001) Grown by Metalorganic Vapor-Phase Epitaxy with Different Preflow Sources
Internal Strain of Self-Assembled InxGa1-xAs Quantum Dots Calculated to Realize Transverse-Magnetic-Mode-Sensitive Interband Optical Transition at Wavelengths of 1.5 μm bands

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