Continuous Wave Operation of InGaN Laser Diodes Fabricated on SiC Substrates(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
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概要
- 論文の詳細を見る
We introduce the characteristics for continuous wave operation at room temperature of InGaN laser diodes fabricated on SiC substrates. The threshold current was 60 mA, the threshold voltage was 8.3V, and the oscillation wavelength was 404.4nm. The lifetime of the laser diodes with a constant light output of 1 mW at 25℃ was 57 hours. The heat dissipation of the devices mounted p-side-up on a stem without using a heat sink was shown to be as good as that of devices mounted p-side-down with an external heat sink, owing to the high thermal conductivity of Sic substrates.
- 社団法人電子情報通信学会の論文
- 2000-04-25
著者
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Domen Kay
The Authors Are With Fujitsu Laboratories Ltd.
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Kubota Shin-ichi
The Authors Are With Fujitsu Laboratories Ltd.
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KURAMATA Akito
The authors are with Fujitsu Laboratories Ltd.
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SOEJIMA Reiko
The authors are with Fujitsu Laboratories Ltd.
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HORINO kazuhiko
The authors are with Fujitsu Laboratories Ltd.
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HACKE Peter
The authors are with Fujitsu Laboratories Ltd.
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TANAHASHI Toshiyuki
The authors are with Fujitsu Laboratories Ltd.
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Hacke Peter
Department Of Electronics Nagoya University
関連論文
- Continuous Wave Operation of InGaN Laser Diodes Fabricated on SiC Substrates(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Continuous Wave Operation at Room Temperature of InGaN Laser Diodes Fabricated on 4H-SiC Substrates
- Room-Temperature Continuous Wave Operation of InGaN Laser Diodes with Vertical Conducting Structure on SiC Substrate
- Continuous-Wave Operation at 250 K of InGaN Multiple Quantum Well Laser Diodes Grown on 6H-SiC with Vertical Conducting Structure
- InGaN Laser Diode Grown on 6H-SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy
- Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase Epitaxy
- Electrical Transport Properties of p-GaN