Continuous-Wave Operation at 250 K of InGaN Multiple Quantum Well Laser Diodes Grown on 6H-SiC with Vertical Conducting Structure
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-10-15
著者
-
Domen Kay
The Authors Are With Fujitsu Laboratories Ltd.
-
Kubota Shin-ichi
The Authors Are With Fujitsu Laboratories Ltd.
-
KURAMATA Akito
The authors are with Fujitsu Laboratories Ltd.
-
SOEJIMA Reiko
The authors are with Fujitsu Laboratories Ltd.
-
HORINO kazuhiko
The authors are with Fujitsu Laboratories Ltd.
-
TANAHASHI Toshiyuki
The authors are with Fujitsu Laboratories Ltd.
-
KURAMATA Akito
Fujitsu Laboratories Ltd.
-
KUBOTA Shin-ichi
Fujitsu Laboratories Ltd.
-
SOEJIMA Reiko
Fujitsu Laboratories Ltd.
-
DOMEN Kay
Fujitsu Laboratories Ltd.
-
HORINO Kazuhiko
Fujitsu Laboratories Ltd.
-
TANAHASHI Toshiyuki
Fujitsu Laboratories Ltd.
-
Kuramata Akito
Fujitsu Laboratories Limited
関連論文
- Continuous Wave Operation of InGaN Laser Diodes Fabricated on SiC Substrates(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Continuous Wave Operation at Room Temperature of InGaN Laser Diodes Fabricated on 4H-SiC Substrates
- Room-Temperature Continuous Wave Operation of InGaN Laser Diodes with Vertical Conducting Structure on SiC Substrate
- Continuous-Wave Operation at 250 K of InGaN Multiple Quantum Well Laser Diodes Grown on 6H-SiC with Vertical Conducting Structure
- InGaN Laser Diode Grown on 6H-SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy
- Thermal Degradation of InP/InGaAsP/InP DH Structure
- Facet Degradation of AlGaInP Visible Semiconductor Lasers with Facet Passivation
- Defect Structures of AlN on Sapphire (0001) Grown by Metalorganic Vapor-Phase Epitaxy with Different Preflow Sources
- Internal Strain of Self-Assembled InxGa1-xAs Quantum Dots Calculated to Realize Transverse-Magnetic-Mode-Sensitive Interband Optical Transition at Wavelengths of 1.5 μm bands