Facet Degradation of AlGaInP Visible Semiconductor Lasers with Facet Passivation

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概要

• 論文の詳細を見る

• We studied the reliability of AlGaInP visible semiconductor lasers with three different coating films. The facet degradation was analyzed using an optical microscope and the micro-auger electron spectroscopy (μ-AES) sputter profiling method. We found that the degradation is associated with facet erosion. We discussed the causes of facet erosion.

• 社団法人応用物理学会の論文
• 1994-07-15

著者

• FURUYA Akira

  Fujitsu Laboratories Ltd.

• TANAHASHI Toshiyuki

  Fujitsu Laboratories Ltd.

• Furuya A

  Nec Corp. Kanagawa Jpn

• Furuya Akira

  Fujitsu Laboratories

• Sugano Mami

  Fujitsu Laboratories Ltd.

• Fukushima Takehiro

  Fujitsu Laboratories Ltd.:(present Address) Department Of System Engineering Faculty Of Computer Sci

• KITO Yasuhiro

  Fujitsu Laboratories Ltd.

• SUDO Hisao

  Fujitsu Laboratories Ltd.

関連論文

• AlGaAs/GaAs Lateral Current Injection (LCI)-MQW Laser Using Impurity-Induced Disordering
• Arsenic Pressure Dependence of Interdiffusion of AlGaAs/GaAs Interface in Quantum Well
• Continuous Wave Operation at Room Temperature of InGaN Laser Diodes Fabricated on 4H-SiC Substrates
• Room-Temperature Continuous Wave Operation of InGaN Laser Diodes with Vertical Conducting Structure on SiC Substrate
• Continuous-Wave Operation at 250 K of InGaN Multiple Quantum Well Laser Diodes Grown on 6H-SiC with Vertical Conducting Structure
• InGaN Laser Diode Grown on 6H-SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy
• Thermal Degradation of InP/InGaAsP/InP DH Structure
• Facet Degradation of AlGaInP Visible Semiconductor Lasers with Facet Passivation

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