Defect Structures of AlN on Sapphire (0001) Grown by Metalorganic Vapor-Phase Epitaxy with Different Preflow Sources
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概要
- 論文の詳細を見る
Two types of AlN defect structures directly grown on sapphire (0001) by metalorganic vapor-phase epitaxy with different initial growth sequences were studied. One was a domain structure with arrays of threading edge dislocations aligned along the [1-210] direction, observed in AlN with NH3 preflow. The other was threading dislocations with screw components located randomly, observed in AlN with TMA preflow. It was also confirmed that threading dislocations caused the surface depression of AlN. A model for the formation of domain structures based on the geometrical aspects and dislocation types is proposed.
- Japan Society of Applied Physicsの論文
- 2005-11-10
著者
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KAWAGUCHI Kenichi
Fujitsu Limited and Fujitsu Laboratories, Limited
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Kuramata Akito
Fujitsu Laboratories Limited
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Kawaguchi Kenichi
Fujitsu Laboratories Limited
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Kawaguchi Kenichi
Fujitsu and Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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