Grazing Incidence X-Ray Diffraction Study on Effect of Implanted BF^+_2 and Linewidth on Titanium Silicidation

概要

論文の詳細を見る
The C49 and C54 fractions in TiSi_2 are examined quantitatively by the grazing incidence X-ray diffraction method in order to study the effect of BF^+_2 implanted in Si substrates and linewidth on TiSi_2 silicidation and the phase transition from C49 to C54. BF^+_2 implantation suppresses both silicidation and the phase transition, and the phase transition is also markedly suppressed on narrow lines. As a result, all the C49 TiSi_2 remains for 0.5 μm lines with BF^+_2 dose of 2×10^<15> cm^<-2> after the 2nd rapid thermal annealing (800℃, 30 s). Furthermore, we have found that the grains of C49 TiSi_2 are preferentially oriented to highly implanted substrates. This indicates that the phase of these grains is stable thermally and difficult to transform to C54 phase.
社団法人応用物理学会の論文
1995-07-15