MOVPE Growth of Selectively Doped AlGaAs/GaAs Heterostructures with Tertiarybutylarsine
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概要
- 論文の詳細を見る
We have used tertiarybutylarsine (tBAs) as a source alternative to AsH_3 in the metalorganic vapor phase epitaxy (MOVPE) of selectively doped AlGaAs/GaAs heterostructures. A sheet carrier concentration of 9.2 × 10^<11> cm^<-2> and an electron mobility of 52000 cm^2・V^<-1>・s^<-1> have been obtained at 77 K for a heterostructure with a 5 nm spacer layer. This is, to our knowledge, the first demonstrated fabrication of two-dimensional electron gas with an alternative As source.
- 社団法人応用物理学会の論文
- 1989-06-20
著者
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KASAI Kazumi
Fujitsu Laboratories Ltd.
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KOMENO Junji
Fujitsu Laboratories Ltd.
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KIKKAWA Toshihide
Fujitsu Laboratories Ltd.
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TANAKA Hitoshi
Fujitsu Laboratories Ltd.
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Kasai K
Fujitsu Laboratories Ltd.
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Komeno J
Fujitsu Laboratories Ltd.
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