Device Design of Direct Tunneling Memory (DTM) Using Technology Computer Aided Design (TCAD) for Low-Power RAM Applications

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Analysis of Non-Uniform Boron Penetration of Nitrided Oxide in PMOSFETs Considering Two-Dimensional Nitrogen Distribution
Boron Penetration Enhanced by Gate Ion Implantation Damage in PMOSFETs
Hydrogen-Enhanced Boron Penetration in PMOS Devices during SiO_2 Chemical Vapor Deposition
Hydrogen-Enhancing Boron Penetration in P-MOS Devices during SiO_2 Chemical Vapor Deposition
Boron Diffusion in Nitrided-Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
Boron Diffusion in Nitrided Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
AlGaAs/GaAs and AlGaAs/InGaAs/GaAs High Electron Mobility Transistors Grown by Metalorganic Vapor Phase Epitaxy Using Tertiarybutylarsine
Large-Area MOVPE Growth of AlGaAs/GaAs Heterostructures for HEMT LSIs
MOVPE Growth of AlGaAs /GaAs Heterostructures for HEMT LSI
Ultra High Density HfO2-Nanodot Memory for Flash Memory Scaling
Near-Ohmic Contact of n-GaAs with GaS/GaAs Quasi-Metal-Insulator-Semiconductor Structure
Multi-Wafer Growth of HEMT LSI Quality AlGaAs/GaAs Heterostructures by MOCVD
Realization of Highly Resistive GaAs/Si Interface and Improvement of RF Performance for High Electron-Mobility Transistors Grown on Si Substrates
High-Density Layer at the SiO_2/Si Interface Observed by Difference X-Ray Reflectivity
High-Accuracy X-ray Reflectivity Study of Native Oxide Formed in Chemical Treatment
InGaP-Channel Field Effect Transistors with High Breakdown Voltage (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
InGaP Channel FET with High Breakdown Voltage
Donor Neurtalization by Fluorine Containing Plasmas in Si-Doped n-Type GaAs Crystals
Study on Chlorine Adsorbed Silicon Surface Using Soft-X-Ray Photoemission Spectroscopy
Dual-Thickness Gate Oxidation Technology with Halogen/Xenon Implantation for Embedded Dynamic Random Access Memories
Dual-Thickness Gate Oxidation Technology with Halogen/Xenon Implantation for Embedded DRAMs
Device Design of Direct Tunneling Memory (DTM) Using Technology Computer Aided Design (TCAD) for Low-Power RAM Applications
Improvement in Retention/Program Time Ratio of Direct Tunneling Memory (DTM) for Low Power SoC Applications(Memory, Low-Power LSI and Low-Power IP)
GaAs Surface Passivation with GaS Thin Film Grown by Molecular Beam Epitaxy
Band Alignment of Molecular-Beam-Apiary-Grown GaS/GaAs Structure Using a Single [(t-Bu)GaS]_4 Precursor : Semiconductors
Lowering the Switching Current of Resistance Random Access Memory Using a Hetero Junction Structure Consisting of Transition Metal Oxides
Electrical Characteristics of Silicon Devices after UV-Excited Dry Cleaning (Special Issue on Opto-Electronics and LSI)
Suppression of Hot Carrier Degradation in LDD n-MOSFETs with Gate N_2O-Nitrided O_3-Oxide
MOVPE Growth of Selectively Doped AlGaAs/GaAs Heterostructures with Tertiarybutylarsine
Identification of MOS Gate Dielectric-Breakdown Spot Using High-Selectivity Etching
Ultraclean Technique for Silicon Wafer Surfaces with HNO_3-HF Systems : Materials and Device Structures with Atomic Scale Resolution(Solid State Devices and Materials 1)
Instability of SiO_2 Film Caused by Fluorine and Chlorine Inclusion
Device Design of Direct Tunneling Memory (DTM) Using Technology Computer Aided Design (TCAD) for Low-Power RAM Applications
Highly Reliable Dynamic Random Access Memory Technology for Application Specific Memory with Dual Nitrogen Concentration Gate Oxynitrides Using Selective Nitrogen Implantation
Near-Ohmic Contact of n-GaAs with GaS/GaAs Quasi-Metal-Insulator-Semiconductor Structure
Dual-Thickness Gate Oxidation Technology with Halogen/Xenon Implantation for Embedded Dynamic Random Access Memories
Ultrahigh-Density HfO2 Nanodots for Flash Memory Scaling
Diffusion Coefficient of As and P in HfO2
A Novel Magnetic Tunneling Junction Shaped Cell with Large Write Operation Margin for High-Density Magnetoresistive Random Access Memory
Diffusion Coefficient of As and P in HfO2

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