Dual-Thickness Gate Oxidation Technology with Halogen/Xenon Implantation for Embedded Dynamic Random Access Memories
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概要
- 論文の詳細を見る
We investigated the enhanced oxidation effect of using silicon (Si) implanted with fluorine (F), iodine (I), and xenon (Xe) before gate oxidation. I and Xe, which result in shallower implants because of their higher mass numbers, were expected to be less damaging to the Si substrate. The resultant increase in oxide thickness was found to be 20%, 80%, and 50% under F, I, and Xe implantations with a dose of $5\times 10^{14}$ cm-2, respectively. We found that F atoms outdiffuse to their ambient through SiO2, and that I implantation causes the greatest increase in oxide thickness. In addition, F implantation shows highly reliable dielectric characteristics, low contact resistance, and a low junction leakage current. Consequently, the F implantation process is capable of providing reliable dual-thickness gate oxide for embedded dynamic random access memories (DRAMs).
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-30
著者
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SUGIZAKI Taro
FUJITSU LABORATOIRES Ltd.
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NAKANISHI Toshiro
FUJITSU LABORATOIRES Ltd.
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Ozawa Yoshio
Toshiba Corporation
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MURAKOSHI Atsushi
Toshiba Corporation
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SUGURO Kyoichi
Toshiba Corporation
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Suguro Kyoichi
Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Murakoshi Atsushi
Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Ozawa Yoshio
Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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