Ultraclean Technique for Silicon Wafer Surfaces with HNO_3-HF Systems : Materials and Device Structures with Atomic Scale Resolution(<Special Section>Solid State Devices and Materials 1)
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概要
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We have developed a wafer cleaning technique called the slight etch (SE) using an HNO_3 and trace HF mixture. A 30 nm surface removal by the SE reduces the surface Fe concentration by one tenth, compared to conventional RCA and all measured elements below a concentration of 10^<10> cm^<-2>, without roughness degradation. The ultraclean surface results in a significant improvement in the C-t retention time and defect density of SiO_2. Since the etch selectivity of silicon for the oxide is more than 10, this cleaning is also ideal for wafers with patterned oxides.
- 社団法人応用物理学会の論文
- 1988-11-20
著者
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NAKANISHI Toshiro
FUJITSU LABORATOIRES Ltd.
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Ohsawa Akira
Fujitsu Laboratories Ltd.
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TAKIZAWA Ritsuo
FUJITSU LABORATORIES LTD.
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HONDA Kouichirou
FUJITSU LABORATORIES LTD.
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