Suppression of Hot Carrier Degradation in LDD n-MOSFETs with Gate N_2O-Nitrided O_3-Oxide
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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OHKUBO Satoshi
Fujitsu Laboratories Ltd.
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NAKANISHI Toshiro
FUJITSU LABORATOIRES Ltd.
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Ohkubo Shuichi
Ulsi Technology Laboratory Fujitsu Laboratories Ltd.
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TAKASAKI Kanetake
Fujitsu Laboratories Ltd.
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Nakanishi Takuya
Department Of Electrical And Electronic Engineering Faculty Of Engineering Shinshu University
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Takasaki K
Ulsi Technology Laboratory Fujitsu Laboratories Ltd.
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Takasaki Kanetake
Fujitsu Laboratories Limited
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TAMURA Yasuyuki
Fujitsu Laboratories Ltd.
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KATAOKA Yoshikazu
FUJITSU LIMITED
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IRINO Kiyoshi
FUJITSU LIMITED
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Irino Kiyoshi
Fujitsu Ltd.
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