Instability of SiO_2 Film Caused by Fluorine and Chlorine Inclusion

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-08-15

著者

• NAKANISHI Toshiro

  FUJITSU LABORATOIRES Ltd.

• Takasaki K

  Ulsi Technology Laboratory Fujitsu Laboratories Ltd.

• Takasaki Kanetake

  Fujitsu Laboratories Limited

• KAWAMOTO Tomokazu

  Fujitsu Ltd.

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• Identification of MOS Gate Dielectric-Breakdown Spot Using High-Selectivity Etching
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• Ultraclean Technique for Silicon Wafer Surfaces with HNO_3-HF Systems : Materials and Device Structures with Atomic Scale Resolution(Solid State Devices and Materials 1)
• Instability of SiO_2 Film Caused by Fluorine and Chlorine Inclusion
• Device Design of Direct Tunneling Memory (DTM) Using Technology Computer Aided Design (TCAD) for Low-Power RAM Applications
• Highly Reliable Dynamic Random Access Memory Technology for Application Specific Memory with Dual Nitrogen Concentration Gate Oxynitrides Using Selective Nitrogen Implantation
• Dual-Thickness Gate Oxidation Technology with Halogen/Xenon Implantation for Embedded Dynamic Random Access Memories
• Ultrahigh-Density HfO2 Nanodots for Flash Memory Scaling

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