Electrical Characteristics of Silicon Devices after UV-Excited Dry Cleaning (Special Issue on Opto-Electronics and LSI)

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概要

• 論文の詳細を見る

• Breakdown fields and the charges to breakdown (Q_<BD>) of oxides increased after UV / Cl_2 pre-oxidation cleaning. This is due to decreased residual metal contaminants on silicon surfaces in the bottom of the LOCOS region after wet cleaning. Treatment in NH_4OH, H_2O_2 and H_2O prior to UV / Cl_2 cleaning suppressed increases in surface roughness and kept leakage currents through the oxides after UV / Cl_2 cleaning as low as those after wet cleaning alone. The large junction leakage currents-caused by metal contaminants introduced during dry etching-decreased after UV / Cl_2 cleaning which removes the contaminated layer.

• 社団法人電子情報通信学会の論文
• 1993-01-25

著者

• Sato Y

  Ntt Transmission Systems Laboratories

• ITO Takashi

  Fujitsu Laboratories Ltd.

• SUGINO Rinshi

  Fujitsu Laboratories Lid.

• Nakanishi Teru

  Fujitsu Limited & Fujitsu Laboratories Ltd.

• NAKANISHI Toshiro

  FUJITSU LABORATOIRES Ltd.

• Sugino Rinshi

  Fujitsu Laboratories Ltd.

• Sato Y

  Chiba Univ. Chiba‐shi Jpn

• OKUNO Masaki

  Fujitsu Laboratories Limited

• Okuno Masaki

  Ulsi Research Div. Fujitsu Laboratories Ltd.

• Sato Yasuhisa

  FUJITSU LABORATORIES LTD.

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