A pH-Controlled Chemical Mechanical Polishing Method for Thin Bonded Silicon-on-Insulator Wafers
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概要
- 論文の詳細を見る
A pH-controlled chemical mechanical polishing (CMP) method for fabricating largearea ultrathin silicon-on-insulator (SOI) layers with uniform thickness was developed. Using a polishing reagent with the pH and colloidal silica concentration lowered, together with grooves fabricated on the SOI layer to expose the insulating oxide, the polishing rate clearly decreased leaving a uniform 0.1-μm-thick SOI layer. An SOI layer with superior thickness uniformity (±0.01 μm) across 5-by-5-mm SOI-Si islands was obtained. The thickness uniformity across the wafers was decreased to ±0.07 μm. In this technique, the end point for polishing was controlled to form thin SOI layers with uniform thickness.
- 社団法人応用物理学会の論文
- 1995-01-15
著者
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ITO Takashi
Fujitsu Laboratories Ltd.
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SUGIMOTO Fumitoshi
Fujitsu Laboratories Ltd.
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ARIMOTO Yoshihiro
Fujitsu Laboratories Ltd.
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HORIE Hiroshi
Fujitsu Laboratories Ltd.
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Ito T
Osaka Univ. Osaka Jpn
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ARIMOTO Yoshihiro
System LSI Development Labs., FUJITSU LABORATORIES LTD.
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Sugimoto F
Fujitsu Lab. Ltd. Atsugi Jpn
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Arimoto Y
System Lsi Development Labs. Fujitsu Laboratories Ltd.
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Sugimoto Fumitoshi
Fujitsu Laboratories Limited, 10-1 Morinosato, Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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