Application of Photo-Assisted Etching Technology to Preferential Etching of Si for Dielectrically Isolated Structure
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概要
- 論文の詳細を見る
A fabrication sequence of a dielectrically isolated structure by field-assisted bonding of oxidized wafer pairs and preferential etch-back process utilizing a photo-assisted etching technology is presented. The etching technique utilizes the high etch selectivity between an epitaxially grown moderate resistivity layer and a low resistivity n-type substrate. The photochemically etched surface is specular and the thickness variations of the epitaxial layer can be controlled to less than ±20 nm across a 3-inch diameter wafer. The process controllability is superior to conventional methods because of the simple etch mechanism. The technique has shown considerable promise for the fabrication of a practical SOI substrate.
- 社団法人応用物理学会の論文
- 1987-09-20
著者
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ITO Takashi
Fujitsu Laboratories Ltd.
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Ozawa Kiyoshi
Fujitsu Laboratories Ltd.
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ISHIKAWA Hajime
Fujitsu Laboratories Ltd.
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