A Backscattering-Channeling Study of Thermally Grown Nitride Films on Silicon
スポンサーリンク
概要
- 論文の詳細を見る
The backscattering-channeling method using 330 keV He^+ ions has been applied to a study of plasma-enhanced, thermally grown nitride films on (100) Si. The nitride films are stoichiometric Si_3N_4, and the interface is reconstructed with 10.5×10^<15> atoms/cm^2 of silicon atoms, which corresponds to 3.9 atoms/string.
- 社団法人応用物理学会の論文
- 1982-02-05
著者
-
ITO Takashi
Fujitsu Laboratories Ltd.
-
Nishi Hidetoshi
Fujitsu Laboratories Limited
-
Tatsuta Shigeru
Fujitsu Laboratories Ltd.
関連論文
- X-Ray Reflectometry and Infrared Analysis of Native Oxides on Si(100) Formed in Chemical Treatment
- A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)
- A WSi/TiN/Au Gate Self-Aligned GaAs MESFET with Selectively Grown n^+-Layer using MOCVD
- Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions
- The Effects of Tungsten-Halogen Lamp Annealing on a Selectively Doped GaAs/N-AlGaAs Heterostructure Grown by MBE
- Silicon-Hydrogen Bonds in Silicon Native Oxides Formed during Wet Chemical Treatments
- Implantation into an AlGaAs/GaAs Heterostructure : B-6: III-V DEVICE TECHNOLOGY
- Ti Salicide Process for Subquarter-Micron CMOS Devices (Special Issue on Quarter Micron Si Device and Process Technologies)
- Wafer Cleaning with Photoexcited Chlorine and Thermal Treatment for High-Quality silicon Epitaxy : Beam Induced Physics and Chemistry
- Silicon-Monohydride Termination of Silicon-111 Surface Formed by Boiling Water
- Synchrotron-Radiation-Induced Modification of Silicon Dioxide Film at Room Temperature : Beam Induced Physics and Chemistry
- Synchrotron-Radiation-Induced Modification of Silicon Dioxide Film at Room Temperature
- Synchrotron Radiation-Assisted Removal of Oxygen and Carbon Contaminants from a Silicon Surface
- Atomic Step Structure on Vicnal H/Si(111) Surface Formed by Hot Water Immersion
- Electrical Characteristics of Silicon Devices after UV-Excited Dry Cleaning (Special Issue on Opto-Electronics and LSI)
- High-Speed SOI Bipolar Transistors Using Bonding and Thinning Techniques
- Evaluation of Photoemitted Current from SiO_2 Film on Silicon During Synchrotron Radiation Irradiation
- Chemical Structures of Native Oxides Formed during Wet Chemical Treatments
- Synchrotron Radiation-Assisted Silicon Film Growth by Irradiation Parallel to the Substrate
- Diffusion Profiles of Arsenic in Silicon Observed by Backscattering Method and by Electrical Measurement
- Achieving High Current Gain and Low Emitter Resistance with the SiC_x:F Widegap Emitter
- Formation of n-Layer in In_Ga_As by Si Implantation
- Identification of MOS Gate Dielectric-Breakdown Spot Using High-Selectivity Etching
- A Backscattering-Channeling Study of Thermally Grown Nitride Films on Silicon
- Application of Photo-Assisted Etching Technology to Preferential Etching of Si for Dielectrically Isolated Structure
- Simultaneous Temperature Measurement of Wafers in Chemical Mechanical Polishing of Silicon Dioxide Layer
- A pH-Controlled Chemical Mechanical Polishing Method for Thin Bonded Silicon-on-Insulator Wafers
- Si Wafer Bonding with Ta Silicide Formation
- Wafer Cleaning with Photoexcited Chlorine and Thermal Treatment for High-Quality Silicon Epitaxy