Lattice Location of ^<15>N Atoms in SiC Analyzed by Nuclear Resonant Reaction

概要

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The nuclear resonant reaction ^<15>N(p, αγ)^<12>C and channeling effect of proton beams have been applied to the study of the lattice location of ion-implanted ^<15>N atoms to a dose of 1×10^<16> ^<15>N_2^+/cm^2 at an energy of 100 keV in 6H-SiC. The structural recovery of the damaged layer has also been studied by the conventional Rutherford backscattering technique combined with channeling effect measurements. Elevated-temperature implantation, in particular, at above 1000℃, facilitates substitution of the ^<15>N atoms into the SiC lattice sites as well as implantation-induced-damage reduction of the SiC host crystal. Postimplantation annealing (at 1300℃) promotes the recovery of the damaged layer. However, it does not promote the substitution of ^<15>N atoms.
社団法人応用物理学会の論文
1995-06-15