Effects of Cr<SUP>+</SUP>-ion Implantation on Oxidation Behavior of Sintered Silicon Nitride with MgAl<SUB>2</SUB>O<SUB>4</SUB> and Y<SUB>2</SUB>O<SUB>3</SUB> as Sintering Additives
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概要
- 論文の詳細を見る
Silicon nitride ceramics were implanted with 200 KeV Cr<SUP>+</SUP> ions and then oxidized at temperatures from 1273 to 1473 K in air. The oxidation scales were examined by RBS, XRD and SEM methods. At temperatures up to 1373 K, in the Cr<SUB>+</SUB>-implanted ceramics, the implanted Cr atoms were predominantly oxidized to Cr<SUB>2</SUB>O<SUB>3</SUB>, which resulted in a reduction of the oxidation of Si<SUB>4</SUB>N<SUB>4</SUB> to SiO<SUB>2</SUB>, and then the diffusion of impurity cations through the grain boundary to the surface oxide (SiO<SUB>2</SUB>) was also retarded. For the oxidation at 1473 K, there was little difference in oxidation behavior between the implanted specimen and the unimplanted one. But the preoxidation at 1273 K of the implanted specimen was found to give the implanted specimen a little better resistivity against the oxidation at 1473 K.
- 社団法人 粉体粉末冶金協会の論文
著者
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Noda Shoji
Toyota Central R & D Labs. Inc.
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HIOKI Tatsumi
Toyota Central aresearchand Development Inc.
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Kamigaito Osami
Toyota Central Res. And Develop. Labs. Inc.
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Kawamoto Jun-ichi
Toyota Central Res. & Develop. Labs. Inc.
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Doi Haruo
Toyota Central Research And Development Laboratories Inc.
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Hioki Tatsumi
Toyota Central Research and Development Labs., Inc.
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DOI Haruo
Toyota Central Research & Development Laboratories Inc.
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Noda Shoji
Toyota Central Research and Development Labs., Inc.
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Kamigaito Osami
Toyota Central Research and Development Labs., Inc.
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