Poly(siloxane)-Based Chemically Amplified Resist Convertible into Silicate Glass

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概要

• 論文の詳細を見る

• A novel poly(siloxane)-based chemically amplified resist has been developed. The polymer is a glass precursor, and it can be converted to silicate glass through merely a lithographic procedure. The developed resist has a high sensitivity of 1.3 μC/cm^2 and a high resolution of 0.1 μm lines and spaces. Simple and highly selective etching processes using the silicate glass mask obtained from this resist system have been proposed, which is substantiated in the bilevel resist process and tungsten-etching process.

• 社団法人応用物理学会の論文
• 1993-12-30

著者

• Endo Akihiro

  Vlsi Research And Development Center Oki Electric Industry Co. Ltd.

• Sakata M

  Omron Corp. Ibaraki Jpn

• Ito T

  Osaka Univ. Osaka Jpn

• Jinbo H

  Oki Electric Ind. Co. Ltd. Tokyo Jpn

• ITO Toshio

  Semiconductor technology Laboratory, OKI Electric Industry Co., Ltd.

• SAKATA Miwa

  Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.

• JINBO Hideyuki

  Integrated Circuits Center Electronic Devices Division, Oki Electric Industry Co., Ltd.

• ASHIDA Itsuji

  Integrated Circuits Center Electronic Devices Division, Oki Electric Industry Co., Ltd.

• Sakata Miwa

  Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.

• Ashida Itsuji

  Integrated Circuits Center Electronic Devices Division Oki Electric Industry Co. Ltd.

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• Recrystallization of Arsenic Implanted Layer in Silicon by Vacuum-Ultraviolet-Light Irradiation
• Effects of Vacuum-Ultraviolet-Light-Induced Surface Reaction on Selective and Anisotropic Etching of Silicon Dioxide Using Anhydrous Hydrogen Fluoride Gas
• Internal Stress of CoSi_2 Films Formed by Rapid Thermal Annealing
• Stress Measurements in Silicon Substrates with TiSi_2 Patterns Using Raman Microprobe
• Thermal Stability of Interconnect of TiN/Cu/TiN Multilayered Structure
• Submicron Ferroelectric Capacitors Fabricated by Chemical Mechanical Polishing Process for High-Density Ferroelectric Memories
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• Copper Interconnects Fabricated by Dry Etching Process
• Lattice Location of ^N Atoms in SiC Analyzed by Nuclear Resonant Reaction
• Determination of Atomic Displacement Modulation in Multi-Layer Structure by X-Ray Diffraction
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• High Resolution Investigation of the Rod-Shaped Scattering from a (111) Si Surface by a Synchrotron Radiation Source
• Random Distribution of Ga and Al Atoms in MBE Grown (Al_Ga_)As
• High-Reliability Copper Interconnects through Dry Etchirng Process
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