Random Distribution of Ga and Al Atoms in MBE Grown (Al_<0.5>Ga_<0.5>)As
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概要
- 論文の詳細を見る
The observation of diffuse scattering due to short-range order (SRO) between Al and Ga atoms in (Al_<0.5>Ga_<0.5>)As which were grown by molecular beam epitaxy, has been made using both electron and X-ray diffraction methods. Only diffuse streaks along the <110> directions were detected, the origin of which must be low frequency transverse acoustic phonons. The absence of SRO diffuse scattering is considered evidence of random distribution of Al and Ga atoms in this substance, consistent with the thermodynamical calculation by Onabe (K. Onabe, Jpn. J. Appl. Phys. 21 (1982) L323).
- 社団法人応用物理学会の論文
- 1984-12-20
著者
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Sakata Makoto
Department Of Applied Physics Faculty Of Engineering Nagoya University
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Sakata M
Omron Corp. Ibaraki Jpn
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Harada Jimpei
Department Of Applied Physics Faculty Of Engineering Nagoya University
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Harada J
School Of Natural Science The University Of Electro-communications
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KASHIWAGURA Nobuo
Faculty of Engineering, Gifu University
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Kashiwagura N
Gifu Univ. Gifu Jpn
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Arii Tatsuo
National Institute for Physiological Sciences
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KASHIHARA Yasuharu
Department of Applied Physics, Nagoya University
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Kashihara Y
Department Of Applied Physics Nagoya University
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Kashihara Yasuharu
Department Of Applied Physics Nagoya University
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KASHIWAGURA Nobuo
Department of Basic Sciences, Faculty of Engineering, Gifu University
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