Electron Density Distribution of Wurtzite-Type Gallium Nitride by Maximum Entropy Method
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概要
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The electron density distribution of' xvtrrtzite-type gallium nitride (xv-GaN) was obtained by tlaeIvlaxinatrm Entropy IV1ethod (IVIEllx4) trsing the Synchrotron Radiation powder data. Contribtrtionof the very nuinor zinc blende-type plaase (z-GaN) to the observed powder data was eliminatedby the unodified Rietveld method. In the obtained IVIBIIVI electron density distribtrtion naap, thereare two kinds of Ga -N covalent bonds. Tlue electron density at the saddle point of Ga -N bondparallel to [0014 axis is 0.5 [e/A']. On the other hand, tlaat of the other three equivalent Ga -Nbonds are 0.8 [e/A'l. Fttrtherznore, it is found that the electron distribtrtion of N atouaa showsasyrnmetric distortion. These features suggest asyrntaaetric therunal vibrations of N atorn whichare restricted by Ga -N bonds.
- 社団法人日本物理学会の論文
- 1998-12-15
著者
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TAKATA Masaki
Department of Applied Physics, Nagoya University
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SAKATA Makoto
Department of Applied Physics, Nagoya University
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Takata Masaki
Department Of Applied Physics School Of Engineering Nagoya University
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Sakata Makoto
Department Of Applied Physics Faculty Of Engineering Nagoya University
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Ikeda Tomohiro
Department Of Applied Chemistry Nagoya Institute Of Technology
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WALISZEWSKI Janusz
Institute of Physics,University at Bialystok
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DOBRZYNSKI Ludwik
Institute of Physics,University at Bialystok
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S. POROWSKI
High Pressure Research Center UNIPRESS
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J. JUN
High Pressure Research Center UNIPRESS
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Ikeda T
Department Of Physics Chuo University
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Dobrzynski L
Univ. Bialystok Bialystok Pol
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Dobrzynski Ludwik
Institut For Energiteknikk
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Waliszewski J
Univ. Bialystok Bialystok Pol
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Waliszewski Janusz
Institute Of Experimental Physics University Of Bialystok
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