Hot Electron Effect in Si(111)Inversion Layer at Low Temperatures
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概要
- 論文の詳細を見る
The rate of electron energy loss to surfons in Si(111) inversion layer is foundtheoretically to be given by -<,de/clt )=2T: for very low lattice temperature 7'<<T.<<4 X [V./(10" cm ')] K irrespective of the phonon modes, the relation beingthe same as the one we found previously for the (100) surface. The relation asdeduced from Ono et al.'s experiment (T = 10 mK, T.<:.'2. K, 7V.=l.6 x 10" cm ')agrees well with our prediction in the 7'.-dependence, but not in the value of 2.
- 社団法人日本物理学会の論文
- 1982-12-15
著者
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Nakamura Koichi
Department of Material Physics, Faculty of Engineering Science, Osaka University
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Sakata Makoto
Department Of Instrumentation Engineering Keio University
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Sakata Makoto
Department Of Applied Physics Faculty Of Engineering Nagoya University
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Fukuchi Mitsuru
Department Of Instrumentation Engineering Faculty Of Science & Technology Keio University
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Fukuchi Mitsuru
Department Of Instrumentation Engineering Keio University
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SHINBA Yutaka
Department of Instrumentation Engineering,Keio University
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Nakamura Koichi
Department Of Imaging Art
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Shinba Yutaka
Department Of Instrumentation Engineering Keio University
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Nakamura Koichi
Department Of Physics Gakushuen University
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Nakamura Koichi
Department Of Clinical Pharmacology And Therapeutics Oita University Faculty Of Medicine
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FUKUCHI Mitsuru
Department of Instrumentation Engineering,Keio University
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Nakamura Koichi
Department of Chemistry, Faculty of Science, Hokkaido University
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