Low-Energy Excitation in Kondo Semiconductors CeNiSn and CeRhSb

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Low-energy excitation in Kondo semiconductors CeNiSn and CeRhSb, has been investigated by the measurement of ^<119>Sn and ^<123>Sb nuclear spin-lattice relaxation rate, 1/T_1. From a T^3-like temperature dependence of 1/T_1 for both compounds, it has been intuitively concluded that the pseudo energy gap with the V-shaped structure is formed in the effective density of states for heavy quasi-particles. The band width of D = 210 K and the pseudo energy gap of Δ=28 K in CeRhSb are almost two times larger than those of CeNiSn (D=140 K and Δ=14 K), respectively. Below 0.4 K and 0.8 K for CeNiSn and CeRhSb, respectively, the T_1T=const. behavior has been commonly observed in the two compounds, indicative of the presence of a residual density of states at the Fermi level. Impurities and/or imperfection in the samples easily mask the intrinsic V-shaped structure of the energy gap at very how temperatures.
社団法人日本物理学会の論文
1994-02-15