Thermoelectric and Magnetic Properties of a Narrow-Gap Semiconductor FeGa_3(Condensed matter: electronic structure and electrical, magnetic, and optical properties)

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We report transport, thermal, and magnetic measurements on single crystalline samples of FeGa_3 prepared by a Ga self flux method. The electrical resistivity and Hall coefficient at temperatures above 300K display semiconducting behaviors with energy gaps of 0.47 and 0.54eV, respectively, whose values agree with the calculated band gap. In the saturation range 100-260K, the carrier mobility μ exhibits an unusual dependence on temperature; μ(T)∝T^<-5/2>. The thermopower has a large negative minimum of -350μV/K at 300K. The diamagnetic susceptibility weakly depends on temperature, which confirms the absence of localized magnetic moments. The T-linear coefficient of the specific heat is 0.03mJ/(K^2・mol), being two orders of magnitude smaller than that reported for Fe-based Kondo semiconductors FeSi and FeSb_2.
社団法人日本物理学会の論文
2009-01-15