Hot Electrons in Si(100)Inversion Layer at Low Lattice Temperatures
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概要
- 論文の詳細を見る
The hot electron effect at low lattice temperatures 1< T< 30 K is studied onthe assumption that, in addition to the phonon scattering and some residualscattering independent of T, there is an unknowrt mechanism which limits theelectron mobility such that jt "(T., T)=p,..).-pg;."(T., 7')4-z5'(7'.), where T. isthe electron temperature. q5'(7'.) is determined by requiring that jt "(T., T)reproduces the measured low field mobility. The field dependence of p(T., 7')is deduced from the usual energy balance consideration and it is concluded thatthe dependence can provide a crucial test for the existence of p5"(7'.) for itshould be noticeably weaker if there were no such unknown mechanism.
- 社団法人日本物理学会の論文
- 1982-01-15
著者
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Nakamura Koichi
Department of Material Physics, Faculty of Engineering Science, Osaka University
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Sakata Makoto
Department Of Instrumentation Engineering Keio University
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Sakata Makoto
Department Of Applied Physics Faculty Of Engineering Nagoya University
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Fukuchi Mitsuru
Department Of Instrumentation Engineering Faculty Of Science & Technology Keio University
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Fukuchi Mitsuru
Department Of Instrumentation Engineering Keio University
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SHINBA Yutaka
Department of Instrumentation Engineering,Keio University
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Nakamura Koichi
Department Of Imaging Art
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Shinba Yutaka
Department Of Instrumentation Engineering Keio University
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Nakamura Koichi
Department Of Physics Gakushuen University
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Nakamura Koichi
Department Of Clinical Pharmacology And Therapeutics Oita University Faculty Of Medicine
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FUKUCHI Mitsuru
Department of Instrumentation Engineering,Keio University
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Nakamura Koichi
Department of Chemistry, Faculty of Science, Hokkaido University
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