Diffusion Coefficient of Selenium in Silicon by Sheet Hall Coefficient Measurements
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概要
- 論文の詳細を見る
A study of the diffusion coefficient of selenium in silicon is described. The concentration distribution of selenium is determined from sheet resistivity and sheet Hall coefficient measurements as a function of temperature, combined with layer removal, considering the fact that the carrier concentration has functional dependence on temperature, on impurity energy level, and on the concentration of donors and acceptors. The diffusion coefficient measured from the concentration of selenium double donors, 0.26 and 0.50 eV below the conduction band edge, is compared with that measured by Fuller's two-specimen method. Between 1000 and 1250℃, the temperature dependence of the diffusion coefficient can expressed by D=0.11 exp [-(2.42±0.05)eV/kT]cm^2/sec.
- 社団法人応用物理学会の論文
- 1979-02-05
著者
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Sakata Makoto
Department Of Applied Physics Faculty Of Engineering Nagoya University
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KIM Cheol-Seong
Department of Instrumentation Engineering, Faculty of Engineering, Keio University
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Kim Cheol-seong
Department Of Instrumentation Engineering Faculty Of Engineering Keio University
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