Atomic Displacements at Surface of Si-Wafer(111)

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概要

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• The rod shaped distribution of X-ray scattered intensity observed from the (111) surface of Si-wafer shows asymmetry in its intensity profile with respect to the Bragg point. Such asymmetry is closely related to the lattice distortion near the crystal surface. From the analysis of the observed asymmetric intensity distribution the Si lattice plane at the interface region between the Si-wafer and the adsorbed amorphous SiO_2 layer is shown to be expanded by about 3% from the bulk Spacing.

• 社団法人応用物理学会の論文
• 1987-06-20

著者

• Harada Jimpei

  Department Of Applied Physics Faculty Of Engineering Nagoya University

• Harada J

  School Of Natural Science The University Of Electro-communications

• KASHIWAGURA Nobuo

  Faculty of Engineering, Gifu University

• Kashiwagura N

  Gifu Univ. Gifu Jpn

• KAWAMURA Kazuo

  Department of Biology, Faculty of Science, Kochi University

• KASHIHARA Yasuharu

  Department of Applied Physics, Nagoya University

• Kashihara Y

  Department Of Applied Physics Nagoya University

• Kashihara Yasuharu

  Department Of Applied Physics Nagoya University

• KASHIWAGURA Nobuo

  Department of Basic Sciences, Faculty of Engineering, Gifu University

• Kawamura Kazuo

  Department Of Applied Physics Nagoya University

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