Cation and Anion Displacements at Hetero-Interfaces of (GaAs)_<28>(AlAs)_<24> Superlattice Layers : Surfaces, Interfaces and Films
スポンサーリンク
概要
- 論文の詳細を見る
By developing a new method of Fourier analysis the local cation and anion displacements in a superlattice, especially near the hetero-interface boundary between the GaAs and the AlAs, were determined from the X-ray integrated intensities of the satellite reflections observed around the two fundamental Bragg reflections, namely the 002 and 004 reflections. The interlayer distance of successive cation layers was found to be 2.827 Å in the GaAs region and 2.835 Å in the AlAs region, except near the hetero-interface boundary. The anion layers are, therefore, located at the mid-point between the cation layers in these regions. However, near the hetero-interface region, which consists of eight molecular layers, anion layers are not located at the mid-point between them but are slightly shifted to the GaAs side. The value of the shift at the boundary between GaAs and AlAs was 0.016 Å.
- 社団法人応用物理学会の論文
- 1988-04-20
著者
-
Harada Jimpei
Department Of Applied Physics Faculty Of Engineering Nagoya University
-
KASHIHARA Yasuharu
Department of Applied Physics, Nagoya University
-
Kashihara Y
Department Of Applied Physics Nagoya University
-
Kashihara Yasuharu
Department Of Applied Physics Nagoya University
関連論文
- Sm^ Photoluminescence and X-Ray Scattering Studies of A- and B-Type Epitaxial CaF_2 Layers on Si(111)
- Neutron Scattering Study of Lattice Dynamics in CuBr. : II. Anharmonic Effect on Debye-Waller Factor
- Origins of Spurious Peaks of Total Reflection X-Ray Fluorescence Analysis of Si Wafers Excited by Monochromatic X-Ray Beam W-Lβ
- Influence of Standing Waves on Impurity Analysis of Si(001) Wafer Using Commercially Available Total-Reflection X-Ray Fluorescence Analyzer
- Main Peak Profiles of Total Reflection X-Ray Fluorescence Analysis of Si(001) Wafers Excited by Monochromatic X-Ray Beam W-Lβ(II)
- Main Peak Profiles of Total Reflection X-Ray Fluorescence Analysis of Si(001) Wafers Excited by Monochromatic X-Ray Beam W-Lβ (I)
- Neutron Scattering Study of Lattice Dynamics in CuBr : Part I. Phonon Dispersion Relations
- Determination of Elastic Constants of K_2[PtCl_4] by Ultrasonic Measurements and Confirmation of Angular Dependence of Their Component by X-Ray Diffuse Scattering
- Neutron Diffraction Study of the Structure of Cubic CsPbBr_3
- Anharmonic Debye-Waller Factor for the Atom of 4/mmm Site Symmetry
- X-Ray Diffraction Study of Fine Gold Particles Prepared by Gas Evaporation Technique. : I. General Feature
- Short-Range Order Parameter of Disordered Cu-29.8 at.% Pd Alloy and the Correlative Microdomain Model
- Determination of Atomic Displacement Modulation in Multi-Layer Structure by X-Ray Diffraction
- Determination of Lattice Distortion in (GaAs)_(AlAs)_ Superlattice Layers by X-Ray Diffraction
- High Resolution Investigation of the Rod-Shaped Scattering from a (111) Si Surface by a Synchrotron Radiation Source
- Atomic Displacements at Surface of Si-Wafer(111)
- Measurement of Elastic Constants of MBE Grown (Ga_Al_)As Mixed Thin Film Crystal by Diffuse X-Ray Scattering
- Random Distribution of Ga and Al Atoms in MBE Grown (Al_Ga_)As
- X-Ray Diffraction Study of Fine Gold Particles Prepared by Gas Evaporation Technique. : II. Characteristic Temperature
- Electron Scattering from Si Surface and Interface by Cross-Sectional Transmission Electron Microscopy
- Study of Local Atomic Order in a Ternary Cu_Ni_Zn_ Alloy Using Anomalous Scattering of Synchrotron Radiation
- Cation and Anion Displacements at Hetero-Interfaces of (GaAs)_(AlAs)_ Superlattice Layers : Surfaces, Interfaces and Films
- Orientation of Pyridine in TaS_2(Py)_
- Neutron Diffraction Study of the Structure in Cubic CsPbCl_3
- Electron Diffraction Study of TaS_2 Intercalated with Pyridine
- Upper and Lower Critical Fields of TaS_2(Pyridine)_
- Structural Phase Transitions in CsPbBr_3
- Determination of Dynamical Matrix by Means of X-Ray Thermal Diffuse Scattering
- Characterization of Ultra Fine Palladium Particles with the Mean Size of 20 A by X-Ray Diffraction
- X-Ray Diffraction from GaAs/AlAs/GaAs Grown on GaAs(001) by MBE