Submicron Ferroelectric Capacitors Fabricated by Chemical Mechanical Polishing Process for High-Density Ferroelectric Memories

概要

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Submicron ferroelectric capacitors were fabricated by a damascene process using chemical mechanical polishing(CMP). The fabricated capacitors consisted of SrBi_2Ta_2O_9(SBT)film with top and bottom electrodes of IrO_2 films. The capacitor size was 0.8 μm in diameter, that is, 0.5 μm^2 in area. Damage by the fabrication process was not observed in electrical measurements, such as the dependence of remanent polarization on electric field and leakage current properties. The remanent polarization(2Pr)of 5 μC/cm^2 at the saturation voltage of 2 V is half that of a large capacitor because the SBT films were composed of single-crystal grains in the bismuth-layered perovskite structure and micro-crystals in many phases including pyrochlore. The crystallinity of the SBT films may be associated with the redistribution of Bi between the SBT thin films and the IrO_2 electrodes during the crystallization annealing of SBT.
社団法人応用物理学会の論文
2000-04-30