Quantum Yield of Electron-Beam Induced Decomposition of SiO2 Overlay on Si in Nanolithography Using a Scanning Tunneling Microscope
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概要
- 論文の詳細を見る
We evaluate the quantum yield of SiO2 decomposition caused by electron-beam irradiation from the tip apex of a scanning tunneling microscope over an electron energy range of 10–180 eV and find onsets at 40 and 120 eV@. These onsets are close to those found previously for electron-beam induced SiO2 dissociation by Auger electron spectroscopy and electron stimulated desorption. Based on the excitation function, we consider that the decomposition is activated by core level excitations like the Knotek–Feibelman mechanism.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2001-10-15
著者
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GOTOH Masahide
The Institute of Scientific and Industrial Research, Osaka University
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IWASAKI Hiroshi
The Institute of Scient4fic and Industrial Research, Osaka University
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ITO Tetsuzo
The Institute of Scientific and Industrial Research, Osaka University
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Sudoh Koichi
The Institute of Science and Industrial Research, Osaka University
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Gotoh Masahide
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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